Engineering Dirac Materials: Metamorphic InAs1-xSbx/InAs1-ySby Superlattices with Ultralow Bandgap

Sergey Suchalkin; Gregory Belenky; Maksim Ermolaev; Seongphill Moon; Yuxuan Jiang; David Graf; Dmitry Smirnov; Boris Laikhtman; Leon Shterengas; Gela Kipshidze; Stefan P. Svensson; Wendy L. Sarney

doi:10.1021/acs.nanolett.7b04304

Engineering Dirac Materials: Metamorphic InAs_1-xSb_x/InAs_1-ySb_y Superlattices with Ultralow Bandgap

Sergey Suchalkin^*, Gregory Belenky, Maksim Ermolaev, Seongphill Moon, Yuxuan Jiang, David Graf, Dmitry Smirnov, Boris Laikhtman, Leon Shterengas, Gela Kipshidze, Stefan P. Svensson, Wendy L. Sarney

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Quasiparticles with Dirac-type dispersion can be observed in nearly gapless bulk semiconductors alloys in which the bandgap is controlled through the material composition. We demonstrate that the Dirac dispersion can be realized in short-period InAs_1-xSb_x/InAs_1-ySb_y metamorphic superlattices with the bandgap tuned to zero by adjusting the superlattice period and layer strain. The new material has anisotropic carrier dispersion: the carrier energy associated with the in-plane motion is proportional to the wave vector and characterized by the Fermi velocity v_F, and the dispersion corresponding to the motion in the growth direction is quadratic. Experimental estimate of the Fermi velocity gives v_F = 6.7 × 10⁵ m/s. Remarkably, the Fermi velocity in this system can be controlled by varying the overlap between electron and hole states in the superlattice. Extreme design flexibility makes the short-period metamorphic InAs_1-xSb_x/InAs_1-ySb_y superlattice a new prospective platform for studying the effects of charge-carrier chirality and topologically nontrivial states in structures with the inverted bandgaps.

Original language	English
Pages (from-to)	412-417
Number of pages	6
Journal	Nano Letters
Volume	18
Issue number	1
DOIs	https://doi.org/10.1021/acs.nanolett.7b04304
State	Published - 10 Jan 2018

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

Keywords

cyclotron resonance
Dirac materials
metamorphic materials
superlattices

Access to Document

10.1021/acs.nanolett.7b04304

Cite this

@article{fd8b25aa794e4ea78a9f9da28b318d7a,

title = "Engineering Dirac Materials: Metamorphic InAs1-xSbx/InAs1-ySby Superlattices with Ultralow Bandgap",

abstract = "Quasiparticles with Dirac-type dispersion can be observed in nearly gapless bulk semiconductors alloys in which the bandgap is controlled through the material composition. We demonstrate that the Dirac dispersion can be realized in short-period InAs1-xSbx/InAs1-ySby metamorphic superlattices with the bandgap tuned to zero by adjusting the superlattice period and layer strain. The new material has anisotropic carrier dispersion: the carrier energy associated with the in-plane motion is proportional to the wave vector and characterized by the Fermi velocity vF, and the dispersion corresponding to the motion in the growth direction is quadratic. Experimental estimate of the Fermi velocity gives vF = 6.7 × 105 m/s. Remarkably, the Fermi velocity in this system can be controlled by varying the overlap between electron and hole states in the superlattice. Extreme design flexibility makes the short-period metamorphic InAs1-xSbx/InAs1-ySby superlattice a new prospective platform for studying the effects of charge-carrier chirality and topologically nontrivial states in structures with the inverted bandgaps.",

keywords = "cyclotron resonance, Dirac materials, metamorphic materials, superlattices",

author = "Sergey Suchalkin and Gregory Belenky and Maksim Ermolaev and Seongphill Moon and Yuxuan Jiang and David Graf and Dmitry Smirnov and Boris Laikhtman and Leon Shterengas and Gela Kipshidze and Svensson, {Stefan P.} and Sarney, {Wendy L.}",

note = "Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

year = "2018",

month = jan,

day = "10",

doi = "10.1021/acs.nanolett.7b04304",

language = "אנגלית",

volume = "18",

pages = "412--417",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "1",

}

TY - JOUR

T1 - Engineering Dirac Materials

T2 - Metamorphic InAs1-xSbx/InAs1-ySby Superlattices with Ultralow Bandgap

AU - Suchalkin, Sergey

AU - Belenky, Gregory

AU - Ermolaev, Maksim

AU - Moon, Seongphill

AU - Jiang, Yuxuan

AU - Graf, David

AU - Smirnov, Dmitry

AU - Laikhtman, Boris

AU - Shterengas, Leon

AU - Kipshidze, Gela

AU - Svensson, Stefan P.

AU - Sarney, Wendy L.

PY - 2018/1/10

Y1 - 2018/1/10

N2 - Quasiparticles with Dirac-type dispersion can be observed in nearly gapless bulk semiconductors alloys in which the bandgap is controlled through the material composition. We demonstrate that the Dirac dispersion can be realized in short-period InAs1-xSbx/InAs1-ySby metamorphic superlattices with the bandgap tuned to zero by adjusting the superlattice period and layer strain. The new material has anisotropic carrier dispersion: the carrier energy associated with the in-plane motion is proportional to the wave vector and characterized by the Fermi velocity vF, and the dispersion corresponding to the motion in the growth direction is quadratic. Experimental estimate of the Fermi velocity gives vF = 6.7 × 105 m/s. Remarkably, the Fermi velocity in this system can be controlled by varying the overlap between electron and hole states in the superlattice. Extreme design flexibility makes the short-period metamorphic InAs1-xSbx/InAs1-ySby superlattice a new prospective platform for studying the effects of charge-carrier chirality and topologically nontrivial states in structures with the inverted bandgaps.

AB - Quasiparticles with Dirac-type dispersion can be observed in nearly gapless bulk semiconductors alloys in which the bandgap is controlled through the material composition. We demonstrate that the Dirac dispersion can be realized in short-period InAs1-xSbx/InAs1-ySby metamorphic superlattices with the bandgap tuned to zero by adjusting the superlattice period and layer strain. The new material has anisotropic carrier dispersion: the carrier energy associated with the in-plane motion is proportional to the wave vector and characterized by the Fermi velocity vF, and the dispersion corresponding to the motion in the growth direction is quadratic. Experimental estimate of the Fermi velocity gives vF = 6.7 × 105 m/s. Remarkably, the Fermi velocity in this system can be controlled by varying the overlap between electron and hole states in the superlattice. Extreme design flexibility makes the short-period metamorphic InAs1-xSbx/InAs1-ySby superlattice a new prospective platform for studying the effects of charge-carrier chirality and topologically nontrivial states in structures with the inverted bandgaps.

KW - cyclotron resonance

KW - Dirac materials

KW - metamorphic materials

KW - superlattices

UR - http://www.scopus.com/inward/record.url?scp=85040311630&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.7b04304

DO - 10.1021/acs.nanolett.7b04304

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

C2 - 29266950

AN - SCOPUS:85040311630

SN - 1530-6984

VL - 18

SP - 412

EP - 417

JO - Nano Letters

JF - Nano Letters

IS - 1

ER -