Abstract
The analysis and measurement of enhanced electroluminescence in silicon-on-insulator metal-oxide-semiconductor transistors with thin silicon layer were presented. In the avalanche breakdown mode, a visible emitted radiation was observed in the device. Five different peaks at a photon energy of 2.31, 2.06, 1.81, 1.63, and 1.50 eV were observed in the silicon-on-insulator device.
Original language | English |
---|---|
Pages (from-to) | 4830-4832 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 26 |
DOIs | |
State | Published - 30 Jun 2003 |