Enhanced electroluminescence in silicon-on-insulator metal-oxide-semiconductor transistors with thin silicon layer

Avi Karsenty, Amir Sa'ar, Nissim Ben-Yosef, Joseph Shappir

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The analysis and measurement of enhanced electroluminescence in silicon-on-insulator metal-oxide-semiconductor transistors with thin silicon layer were presented. In the avalanche breakdown mode, a visible emitted radiation was observed in the device. Five different peaks at a photon energy of 2.31, 2.06, 1.81, 1.63, and 1.50 eV were observed in the silicon-on-insulator device.

Original languageEnglish
Pages (from-to)4830-4832
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number26
DOIs
StatePublished - 30 Jun 2003

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