Enhanced electroluminescence in silicon-on-insulator metal-oxide-semiconductor transistors with thin silicon layer

Avi Karsenty; Amir Sa'ar; Nissim Ben-Yosef; Joseph Shappir

doi:10.1063/1.1587877

Enhanced electroluminescence in silicon-on-insulator metal-oxide-semiconductor transistors with thin silicon layer

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Abstract

The analysis and measurement of enhanced electroluminescence in silicon-on-insulator metal-oxide-semiconductor transistors with thin silicon layer were presented. In the avalanche breakdown mode, a visible emitted radiation was observed in the device. Five different peaks at a photon energy of 2.31, 2.06, 1.81, 1.63, and 1.50 eV were observed in the silicon-on-insulator device.

Original language	English
Pages (from-to)	4830-4832
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	26
DOIs	https://doi.org/10.1063/1.1587877
State	Published - 30 Jun 2003

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abstract = "The analysis and measurement of enhanced electroluminescence in silicon-on-insulator metal-oxide-semiconductor transistors with thin silicon layer were presented. In the avalanche breakdown mode, a visible emitted radiation was observed in the device. Five different peaks at a photon energy of 2.31, 2.06, 1.81, 1.63, and 1.50 eV were observed in the silicon-on-insulator device.",

author = "Avi Karsenty and Amir Sa'ar and Nissim Ben-Yosef and Joseph Shappir",

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AU - Karsenty, Avi

AU - Sa'ar, Amir

AU - Ben-Yosef, Nissim

AU - Shappir, Joseph

PY - 2003/6/30

Y1 - 2003/6/30

N2 - The analysis and measurement of enhanced electroluminescence in silicon-on-insulator metal-oxide-semiconductor transistors with thin silicon layer were presented. In the avalanche breakdown mode, a visible emitted radiation was observed in the device. Five different peaks at a photon energy of 2.31, 2.06, 1.81, 1.63, and 1.50 eV were observed in the silicon-on-insulator device.

AB - The analysis and measurement of enhanced electroluminescence in silicon-on-insulator metal-oxide-semiconductor transistors with thin silicon layer were presented. In the avalanche breakdown mode, a visible emitted radiation was observed in the device. Five different peaks at a photon energy of 2.31, 2.06, 1.81, 1.63, and 1.50 eV were observed in the silicon-on-insulator device.

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Enhanced electroluminescence in silicon-on-insulator metal-oxide-semiconductor transistors with thin silicon layer

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