TY - JOUR
T1 - Enhanced formation of Ge nanocrystals in Ge:SiO 2 layers by swift heavy ions
AU - Antonova, I. V.
AU - Skuratov, V. A.
AU - Volodin, V. A.
AU - Smagulova, S. A.
AU - Marin, D. M.
AU - Janse Van Vuuren, A.
AU - Neethling, J.
AU - Jedrzejewski, J.
AU - Balberg, I.
PY - 2012/7/18
Y1 - 2012/7/18
N2 - In this paper we report the ability of swift heavy Xe ions with an energy of 480MeV and a fluence of 10 12cm 2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge:SiO 2 films with subsequent annealing at 500°C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550°C and post-irradiation annealing at 600°C, which also leads to the observation of room temperature visible photoluminescence.
AB - In this paper we report the ability of swift heavy Xe ions with an energy of 480MeV and a fluence of 10 12cm 2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge:SiO 2 films with subsequent annealing at 500°C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550°C and post-irradiation annealing at 600°C, which also leads to the observation of room temperature visible photoluminescence.
UR - http://www.scopus.com/inward/record.url?scp=84863510728&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/45/28/285302
DO - 10.1088/0022-3727/45/28/285302
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AN - SCOPUS:84863510728
SN - 0022-3727
VL - 45
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 28
M1 - 285302
ER -