Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond

L. M. Pham*, N. Bar-Gill, D. Le Sage, C. Belthangady, A. Stacey, M. Markham, D. J. Twitchen, M. D. Lukin, R. L. Walsworth

*Corresponding author for this work

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71 Scopus citations

Abstract

We demonstrate preferential orientation of nitrogen-vacancy (NV) color centers along two of four possible crystallographic axes in diamonds grown by chemical vapor deposition on the {100} face. We identify the relevant growth regime and present a possible explanation of this effect. We show that preferential orientation provides increased optical readout contrast for NV multispin measurements, including enhanced ac magnetic-field sensitivity, thus providing an important step towards high-fidelity multispin-qubit quantum information processing, sensing, and metrology.

Original languageAmerican English
Article number121202
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume86
Issue number12
DOIs
StatePublished - 6 Sep 2012
Externally publishedYes

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