Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond

L. M. Pham; N. Bar-Gill; D. Le Sage; C. Belthangady; A. Stacey; M. Markham; D. J. Twitchen; M. D. Lukin; R. L. Walsworth

doi:10.1103/PhysRevB.86.121202

Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond

L. M. Pham^*, N. Bar-Gill, D. Le Sage, C. Belthangady, A. Stacey, M. Markham, D. J. Twitchen, M. D. Lukin, R. L. Walsworth

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

We demonstrate preferential orientation of nitrogen-vacancy (NV) color centers along two of four possible crystallographic axes in diamonds grown by chemical vapor deposition on the {100} face. We identify the relevant growth regime and present a possible explanation of this effect. We show that preferential orientation provides increased optical readout contrast for NV multispin measurements, including enhanced ac magnetic-field sensitivity, thus providing an important step towards high-fidelity multispin-qubit quantum information processing, sensing, and metrology.

Original language	American English
Article number	121202
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	86
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.86.121202
State	Published - 6 Sep 2012
Externally published	Yes

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@article{192e748a5324449ebe004443d8adbed1,

title = "Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond",

abstract = "We demonstrate preferential orientation of nitrogen-vacancy (NV) color centers along two of four possible crystallographic axes in diamonds grown by chemical vapor deposition on the {100} face. We identify the relevant growth regime and present a possible explanation of this effect. We show that preferential orientation provides increased optical readout contrast for NV multispin measurements, including enhanced ac magnetic-field sensitivity, thus providing an important step towards high-fidelity multispin-qubit quantum information processing, sensing, and metrology.",

author = "Pham, {L. M.} and N. Bar-Gill and {Le Sage}, D. and C. Belthangady and A. Stacey and M. Markham and Twitchen, {D. J.} and Lukin, {M. D.} and Walsworth, {R. L.}",

year = "2012",

month = sep,

day = "6",

doi = "10.1103/PhysRevB.86.121202",

language = "American English",

volume = "86",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "12",

}

TY - JOUR

T1 - Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond

AU - Pham, L. M.

AU - Bar-Gill, N.

AU - Le Sage, D.

AU - Belthangady, C.

AU - Stacey, A.

AU - Markham, M.

AU - Twitchen, D. J.

AU - Lukin, M. D.

AU - Walsworth, R. L.

PY - 2012/9/6

Y1 - 2012/9/6

N2 - We demonstrate preferential orientation of nitrogen-vacancy (NV) color centers along two of four possible crystallographic axes in diamonds grown by chemical vapor deposition on the {100} face. We identify the relevant growth regime and present a possible explanation of this effect. We show that preferential orientation provides increased optical readout contrast for NV multispin measurements, including enhanced ac magnetic-field sensitivity, thus providing an important step towards high-fidelity multispin-qubit quantum information processing, sensing, and metrology.

AB - We demonstrate preferential orientation of nitrogen-vacancy (NV) color centers along two of four possible crystallographic axes in diamonds grown by chemical vapor deposition on the {100} face. We identify the relevant growth regime and present a possible explanation of this effect. We show that preferential orientation provides increased optical readout contrast for NV multispin measurements, including enhanced ac magnetic-field sensitivity, thus providing an important step towards high-fidelity multispin-qubit quantum information processing, sensing, and metrology.

UR - http://www.scopus.com/inward/record.url?scp=84866419020&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.86.121202

DO - 10.1103/PhysRevB.86.121202

M3 - Article

AN - SCOPUS:84866419020

SN - 1098-0121

VL - 86

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 12

M1 - 121202

ER -

Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond

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