Enhancement of near infrared light sensing using side-gate modulation

Avner Neubauer; Arthur Shapiro; Shira Yochelis; Eyal Capua; Ron Namman; Efrat Lifshitz; Yossi Paltiel

doi:10.1016/j.sna.2017.09.042

Enhancement of near infrared light sensing using side-gate modulation

Avner Neubauer, Arthur Shapiro, Shira Yochelis, Eyal Capua, Ron Namman, Efrat Lifshitz, Yossi Paltiel^*

^*Corresponding author for this work

The Institute of Applied Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The integration of nanostructures in electronic devices utilizes their unique quantum properties for realizing discrete measuring systems. Specifically, self-assembled organic monolayers and nanocrystals (NCs), together with bottom-up production methods, can lead to new types of electronic devices. In this work, we present a wavelength-tunable near-infrared detection device in which PbS NCs are used to create an optical gate for an AlGaAs/GaAs high electron mobility device. By integrating side gates, we were able to enhance light detection sensitivity by optimizing the conductivity of the channel. Both DC and AC modulations of the side gate were tested and compared in order to enhance the detector's signal–to-noise ratio (SNR). Higher harmonic signals of the side gate modulation supply additional information about the detection mechanism.

Original language	English
Pages (from-to)	1-7
Number of pages	7
Journal	Sensors and Actuators, A: Physical
Volume	267
DOIs	https://doi.org/10.1016/j.sna.2017.09.042
State	Published - 1 Nov 2017

Bibliographical note

Publisher Copyright:
© 2017 Elsevier B.V.

Keywords

AC modulation
IR detection
Quantum dots
Sensitivity
Side gate
Tunability

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10.1016/j.sna.2017.09.042

Cite this

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abstract = "The integration of nanostructures in electronic devices utilizes their unique quantum properties for realizing discrete measuring systems. Specifically, self-assembled organic monolayers and nanocrystals (NCs), together with bottom-up production methods, can lead to new types of electronic devices. In this work, we present a wavelength-tunable near-infrared detection device in which PbS NCs are used to create an optical gate for an AlGaAs/GaAs high electron mobility device. By integrating side gates, we were able to enhance light detection sensitivity by optimizing the conductivity of the channel. Both DC and AC modulations of the side gate were tested and compared in order to enhance the detector's signal–to-noise ratio (SNR). Higher harmonic signals of the side gate modulation supply additional information about the detection mechanism.",

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AU - Capua, Eyal

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AU - Lifshitz, Efrat

AU - Paltiel, Yossi

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KW - Tunability

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Enhancement of near infrared light sensing using side-gate modulation

Abstract

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Keywords

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