TY - JOUR
T1 - Enhancing the Photon Absorption and Charge Carrier Dynamics of BaSnO3 Photoanodes via Intrinsic and Extrinsic Defects
AU - Gahlawat, Soniya
AU - Ahmet, Ibbi Y.
AU - Schnell, Patrick
AU - Levine, Igal
AU - Zhang, Siyuan
AU - Ingole, Pravin P.
AU - Abdi, Fatwa F.
N1 - Publisher Copyright:
© 2022 American Chemical Society.
PY - 2022/5/24
Y1 - 2022/5/24
N2 - Barium stannate (BaSnO3) crystallizes in the cubic perovskite-type structure and typically exhibits a wide band gap of >3.0 eV; thus, it is often considered unsuitable as a photo-absorber material for solar energy conversion. We present a spray-pyrolysis method for the fabrication of BaSnO3 photoanodes, with a smaller optical gap of ∼-2.2 eV. By annealing the photoanodes in 5% hydrogen sulfide (H2S) gas, the optical gap is further reduced to ∼-1.7 eV, with an ∼-20-fold increase in photocurrent density and an improved onset potential of ∼-0 VRHE- To understand the reasons behind this performance enhancement, we utilize a combination of spectroscopy techniques, including photoluminescence, wavelength-dependent time-resolved surface photovoltage analysis, and photoconductivity measurements. We find that H2S annealing of BaSnO3 generates a set of filled defect states associated with oxygen vacancies (VO••), Sn2+ centers (Sn′Sn), and sulfur substitutions (SO×), which are situated ∼-1.4 to 1.9 eV below the conduction band minimum and exhibit a degree of orbital overlap with the valence band maximum. Increasing the density of these defects shifts the optical onset of photocurrent generation to ∼-1.7 eV and enables holes to transport via a hopping mechanism. Resultantly, the charge carrier mobility is shown to increase by 20-fold, reaching ∼-0.04
AB - Barium stannate (BaSnO3) crystallizes in the cubic perovskite-type structure and typically exhibits a wide band gap of >3.0 eV; thus, it is often considered unsuitable as a photo-absorber material for solar energy conversion. We present a spray-pyrolysis method for the fabrication of BaSnO3 photoanodes, with a smaller optical gap of ∼-2.2 eV. By annealing the photoanodes in 5% hydrogen sulfide (H2S) gas, the optical gap is further reduced to ∼-1.7 eV, with an ∼-20-fold increase in photocurrent density and an improved onset potential of ∼-0 VRHE- To understand the reasons behind this performance enhancement, we utilize a combination of spectroscopy techniques, including photoluminescence, wavelength-dependent time-resolved surface photovoltage analysis, and photoconductivity measurements. We find that H2S annealing of BaSnO3 generates a set of filled defect states associated with oxygen vacancies (VO••), Sn2+ centers (Sn′Sn), and sulfur substitutions (SO×), which are situated ∼-1.4 to 1.9 eV below the conduction band minimum and exhibit a degree of orbital overlap with the valence band maximum. Increasing the density of these defects shifts the optical onset of photocurrent generation to ∼-1.7 eV and enables holes to transport via a hopping mechanism. Resultantly, the charge carrier mobility is shown to increase by 20-fold, reaching ∼-0.04
UR - http://www.scopus.com/inward/record.url?scp=85130053789&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.1c04129
DO - 10.1021/acs.chemmater.1c04129
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AN - SCOPUS:85130053789
SN - 0897-4756
VL - 34
SP - 4320
EP - 4335
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 10
ER -