Erratum: Strained quantum well valence-band structure and optimal parameters for AlGaAs-InGaAs-AlGaAs p-channel field-effect transistors (Journal of Applied Physics (1991) 70 (1531))

B. Laikhtman; R. A. Kiehl; D. J. Frank

doi:10.1063/1.350377

Erratum: Strained quantum well valence-band structure and optimal parameters for AlGaAs-InGaAs-AlGaAs p-channel field-effect transistors (Journal of Applied Physics (1991) 70 (1531))

B. Laikhtman^*, R. A. Kiehl, D. J. Frank

^*Corresponding author for this work

Research output: Contribution to journal › Comment/debate

2 Scopus citations

Original language	English
Pages (from-to)	5719
Number of pages	1
Journal	Journal of Applied Physics
Volume	70
Issue number	10
DOIs	https://doi.org/10.1063/1.350377
State	Published - 1991
Externally published	Yes

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10.1063/1.350377

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Erratum: Strained quantum well valence-band structure and optimal parameters for AlGaAs-InGaAs-AlGaAs p-channel field-effect transistors (Journal of Applied Physics (1991) 70 (1531))

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