The evolution of thin-film morphologies during ion beam bombardment has been examined by a combination of experimental and molecular dynamics simulation methods. Surface roughness, stress and domain growth in amorphous and nanocrystalline films were investigated. The experiments provide support for the model of radiation-induced viscous flow. The coefficient of radiation-induced viscosity deduced from the experiments is insensitive to both the particular material and the irradiation particle. The computer simulations, using molecular dynamics, reveal that while flow may be caused by local melting of nanometer-sized regions along the track of the ion, in some cases the simple creation of point defects is sufficient to explain radiation-induced stress relaxation.
|Original language||American English|
|Number of pages||7|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|State||Published - Dec 2003|
|Event||Atomic Collisions in Solids - India, India|
Duration: 19 Jan 2003 → 24 Jan 2003
Bibliographical noteFunding Information:
The authors are grateful to the US Department of Energy, Basic Energy Sciences, grant DEFG02-96-ER45439, and the US National Science Foundation, grant DMR-9986160, for support of this work, and to the National Computation Alliance Center and the National Energy Research Supercomputer Center for grants of computer time.