TY - GEN
T1 - Excitation frequency-dependent raman scattering in a-SiC
T2 - 1994 MRS Spring Meeting
AU - Morell, G.
AU - Katiyar, R. S.
AU - Weisz, S. Z.
AU - Balberg, I.
PY - 1994
Y1 - 1994
N2 - We have carried out a comprehensive Raman scattering study of a-Si, XCX:H alloys using three laser excitations 458, 514, and 581 nm The alloys studied were prepared with and without H, dilution, had carbon concentrations, x, between 7 and 20 at %, and Tauc optical gaps in the range of 1.8 ≤ Eg ≤ 2.2 eV. The results obtained explain the previous conflicting reports in the literature regarding the Si network disorder and indicate that in the Sirich compositions, chemical clustering takes place with increasing carbon content.
AB - We have carried out a comprehensive Raman scattering study of a-Si, XCX:H alloys using three laser excitations 458, 514, and 581 nm The alloys studied were prepared with and without H, dilution, had carbon concentrations, x, between 7 and 20 at %, and Tauc optical gaps in the range of 1.8 ≤ Eg ≤ 2.2 eV. The results obtained explain the previous conflicting reports in the literature regarding the Si network disorder and indicate that in the Sirich compositions, chemical clustering takes place with increasing carbon content.
UR - http://www.scopus.com/inward/record.url?scp=84897676401&partnerID=8YFLogxK
M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???
AN - SCOPUS:84897676401
SN - 1558992367
SN - 9781558992368
T3 - Materials Research Society Symposium Proceedings
SP - 607
EP - 612
BT - Amorphous Silicon Technology - 1994
Y2 - 4 April 1994 through 8 April 1994
ER -