Extraction of Schottky diode parameters with a bias dependent barrier height

V. Mikhelashvili*, G. Eisenstein, R. Uzdin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

63 Scopus citations

Abstract

We describe a technique to extract device parameters of a Schottky barrier diode whose barrier height is bias dependent and which contains a linear series resistance. The extracted parameters include the saturation current (zero bias barrier height), the voltage dependence of the barrier height and of the ideality factor as well as series resistance. The technique makes use of forward biased current-voltage (I-V) characteristic and voltage-dependent differential slope curve α = d(lnI)/d(lnV). The method is verified using simulated and experimental I-V curves of an Al-pSi structure. The proposed procedure is not limited to Schottky barrier diodes but may be applied to other diode types based on P-N junction.

Original languageAmerican English
Pages (from-to)143-148
Number of pages6
JournalSolid-State Electronics
Volume45
Issue number1
DOIs
StatePublished - 1 Jan 2001
Externally publishedYes

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