Fast magnetically controlled switching in iron oxide films

I. Balberg

doi:10.1063/1.1653540

Fast magnetically controlled switching in iron oxide films

I. Balberg^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The application of a magnetic field of 10 kG causes a decrease by more than a factor of 2 in the delay time for switching in iron oxide films. This effect is associated with very short switching time (≲ 20 nsec) and some other characteristic properties. It appears that while initiated thermally, the switching itself is an electric breakdown that follows a buildup of a high electric field.

Original language	English
Pages (from-to)	562-564
Number of pages	3
Journal	Applied Physics Letters
Volume	18
Issue number	12
DOIs	https://doi.org/10.1063/1.1653540
State	Published - 1971
Externally published	Yes

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abstract = "The application of a magnetic field of 10 kG causes a decrease by more than a factor of 2 in the delay time for switching in iron oxide films. This effect is associated with very short switching time (≲ 20 nsec) and some other characteristic properties. It appears that while initiated thermally, the switching itself is an electric breakdown that follows a buildup of a high electric field.",

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Fast magnetically controlled switching in iron oxide films

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