FeTe0.55Se0.45 van der Waals tunneling devices

Ayelet Zalic, Shahar Simon, Sergei Remennik, Atzmon Vakahi, Genda D. Gu, Hadar Steinberg*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We report on fabrication of devices integrating FeTe0.55Se0.45 with other van der Waals materials, measuring transport properties as well as tunneling spectra at variable magnetic fields and temperatures down to 35 mK. Transport measurements are reliable and repeatable, revealing temperature and magnetic field dependence in agreement with prior results, confirming that fabrication processing does not alter bulk properties. However, cross-sectional scanning transmission microscopy reveals oxidation of the surface, which may explain a lower yield of tunneling device fabrication. We nonetheless observe hard-gap planar tunneling into FeTe0.55Se0.45 through a MoS2 barrier. Notably, a minimal hard gap of 0.5 meV persists up to a magnetic field of 9 T in the ab plane and 3 T out of plane. This may be the result of very small junction dimensions or a quantum-limit minimal energy spacing between vortex bound states. We also observe defect-assisted tunneling, exhibiting bias-symmetric resonant states, which may arise due to resonant Andreev processes.

Original languageAmerican English
Article number064517
JournalPhysical Review B
Volume100
Issue number6
DOIs
StatePublished - 20 Aug 2019

Bibliographical note

Funding Information:
This work was funded by a European Research Council Starting Grant (No. 637298, TUNNEL) and Israeli Science Foundation grant 1363/15. Work at Brookhaven is supported by the Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, US Department of Energy under Contract No. DE-SC0012704. A.Z. is grateful to the Azrieli Foundation for an Azrieli Fellowship

Publisher Copyright:
© 2019 American Physical Society.

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