Field distribution in semiconducting C dS under acoustic gain conditions

A. Many; I. Balberg

doi:10.1016/0031-9163(66)91264-9

Field distribution in semiconducting C dS under acoustic gain conditions

A. Many^*, I. Balberg

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The amplified ultrasonic flux is highly concentrated: in propagating domains in the transient state and in a stationary domain bordering with the anode at steady state. The results point to the mechanism of formation of the steady-state flux.

Original language	English
Pages (from-to)	486-487
Number of pages	2
Journal	Physics Letters
Volume	21
Issue number	5
DOIs	https://doi.org/10.1016/0031-9163(66)91264-9
State	Published - 15 Jun 1966

Access to Document

10.1016/0031-9163(66)91264-9

Cite this

@article{ed38dcf3776247c98434edb1413857e2,

title = "Field distribution in semiconducting C dS under acoustic gain conditions",

abstract = "The amplified ultrasonic flux is highly concentrated: in propagating domains in the transient state and in a stationary domain bordering with the anode at steady state. The results point to the mechanism of formation of the steady-state flux.",

author = "A. Many and I. Balberg",

year = "1966",

month = jun,

day = "15",

doi = "10.1016/0031-9163(66)91264-9",

language = "אנגלית",

volume = "21",

pages = "486--487",

journal = "Physics Letters",

issn = "0031-9163",

publisher = "North-Holland Publ Co",

number = "5",

}

TY - JOUR

T1 - Field distribution in semiconducting C dS under acoustic gain conditions

AU - Many, A.

AU - Balberg, I.

PY - 1966/6/15

Y1 - 1966/6/15

N2 - The amplified ultrasonic flux is highly concentrated: in propagating domains in the transient state and in a stationary domain bordering with the anode at steady state. The results point to the mechanism of formation of the steady-state flux.

AB - The amplified ultrasonic flux is highly concentrated: in propagating domains in the transient state and in a stationary domain bordering with the anode at steady state. The results point to the mechanism of formation of the steady-state flux.

UR - http://www.scopus.com/inward/record.url?scp=23544432197&partnerID=8YFLogxK

U2 - 10.1016/0031-9163(66)91264-9

DO - 10.1016/0031-9163(66)91264-9

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:23544432197

SN - 0031-9163

VL - 21

SP - 486

EP - 487

JO - Physics Letters

JF - Physics Letters

IS - 5

ER -

Field distribution in semiconducting C dS under acoustic gain conditions

Abstract

Access to Document

Other files and links

Fingerprint

Cite this