Field distribution in semiconducting C dS under acoustic gain conditions

A. Many; I. Balberg

doi:10.1016/0031-9163(66)91264-9

Field distribution in semiconducting C dS under acoustic gain conditions

A. Many^*
, I. Balberg

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The amplified ultrasonic flux is highly concentrated: in propagating domains in the transient state and in a stationary domain bordering with the anode at steady state. The results point to the mechanism of formation of the steady-state flux.

Original language	English
Pages (from-to)	486-487
Number of pages	2
Journal	Physics Letters
Volume	21
Issue number	5
DOIs	https://doi.org/10.1016/0031-9163(66)91264-9
State	Published - 15 Jun 1966

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title = "Field distribution in semiconducting C dS under acoustic gain conditions",

abstract = "The amplified ultrasonic flux is highly concentrated: in propagating domains in the transient state and in a stationary domain bordering with the anode at steady state. The results point to the mechanism of formation of the steady-state flux.",

author = "A. Many and I. Balberg",

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AU - Balberg, I.

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AB - The amplified ultrasonic flux is highly concentrated: in propagating domains in the transient state and in a stationary domain bordering with the anode at steady state. The results point to the mechanism of formation of the steady-state flux.

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Field distribution in semiconducting C dS under acoustic gain conditions

Abstract

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