Field-induced tunnel diode in indium antimonide

S. Margalit; J. Shappir; I. Kidron

doi:10.1063/1.322152

Field-induced tunnel diode in indium antimonide

S. Margalit^*, J. Shappir, I. Kidron

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Tunneling in a field-induced diode in InSb operated at 77 °K is reported. The current-voltage characteristics is controlled by the gate of an MIS structure. Tunneling is observed in both forward and reverse modes of operation. For SiO₂ insulator thickness of 1000 Å, tunneling threshold voltages of 4 and 0.6 V are measured for the two operating regions, respectively.

Original language	English
Pages (from-to)	3999-4001
Number of pages	3
Journal	Journal of Applied Physics
Volume	46
Issue number	9
DOIs	https://doi.org/10.1063/1.322152
State	Published - 1975
Externally published	Yes

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title = "Field-induced tunnel diode in indium antimonide",

abstract = "Tunneling in a field-induced diode in InSb operated at 77 °K is reported. The current-voltage characteristics is controlled by the gate of an MIS structure. Tunneling is observed in both forward and reverse modes of operation. For SiO2 insulator thickness of 1000 {\AA}, tunneling threshold voltages of 4 and 0.6 V are measured for the two operating regions, respectively.",

author = "S. Margalit and J. Shappir and I. Kidron",

year = "1975",

doi = "10.1063/1.322152",

language = "אנגלית",

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journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Field-induced tunnel diode in indium antimonide

AU - Margalit, S.

AU - Shappir, J.

AU - Kidron, I.

PY - 1975

Y1 - 1975

N2 - Tunneling in a field-induced diode in InSb operated at 77 °K is reported. The current-voltage characteristics is controlled by the gate of an MIS structure. Tunneling is observed in both forward and reverse modes of operation. For SiO2 insulator thickness of 1000 Å, tunneling threshold voltages of 4 and 0.6 V are measured for the two operating regions, respectively.

AB - Tunneling in a field-induced diode in InSb operated at 77 °K is reported. The current-voltage characteristics is controlled by the gate of an MIS structure. Tunneling is observed in both forward and reverse modes of operation. For SiO2 insulator thickness of 1000 Å, tunneling threshold voltages of 4 and 0.6 V are measured for the two operating regions, respectively.

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DO - 10.1063/1.322152

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AN - SCOPUS:0016557142

SN - 0021-8979

VL - 46

SP - 3999

EP - 4001

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

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Field-induced tunnel diode in indium antimonide

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