Films of chalcogenide glassy semiconductors: New phenomena and new applications

V. Lyubin; M. Klebanov; A. Feigel; B. Sfez

doi:10.1016/j.tsf.2003.12.080

Films of chalcogenide glassy semiconductors: New phenomena and new applications

V. Lyubin^*, M. Klebanov, A. Feigel, B. Sfez

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

53 Scopus citations

Abstract

The photoinduced phenomena in films of chalcogenide glassy semiconductors (ChGS) was analyzed. The applications of these films for fabrication of IR microlens arrays and photonic-band-gap crystals were discussed. It was concluded that the observed anisotropy of photoconductivity is due to anisotropy of the carriers' mobility. The results show that ChGS open new possibilities in the development of different efficient electrooptical devices.

Original language	English
Pages (from-to)	183-186
Number of pages	4
Journal	Thin Solid Films
Volume	459
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2003.12.080
State	Published - 1 Jul 2004
Externally published	Yes
Event	Proceedings of the Eight European Vacuum Congress Berlin 2003 - Berlin, Germany Duration: 23 Jun 2004 → 26 Jun 2004

Bibliographical note

Funding Information:
This research was supported by the Israel Science Foundation (grant No 388/00-1).

Keywords

Chalcogenide glassy films
Microlens arrays
Photodoping
Photoinduced anisotropy
Photoinduced structural transformations
Photonic-band-gap crystals

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10.1016/j.tsf.2003.12.080

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title = "Films of chalcogenide glassy semiconductors: New phenomena and new applications",

abstract = "The photoinduced phenomena in films of chalcogenide glassy semiconductors (ChGS) was analyzed. The applications of these films for fabrication of IR microlens arrays and photonic-band-gap crystals were discussed. It was concluded that the observed anisotropy of photoconductivity is due to anisotropy of the carriers' mobility. The results show that ChGS open new possibilities in the development of different efficient electrooptical devices.",

keywords = "Chalcogenide glassy films, Microlens arrays, Photodoping, Photoinduced anisotropy, Photoinduced structural transformations, Photonic-band-gap crystals",

author = "V. Lyubin and M. Klebanov and A. Feigel and B. Sfez",

note = "Funding Information: This research was supported by the Israel Science Foundation (grant No 388/00-1).; Proceedings of the Eight European Vacuum Congress Berlin 2003 ; Conference date: 23-06-2004 Through 26-06-2004",

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doi = "10.1016/j.tsf.2003.12.080",

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T2 - Proceedings of the Eight European Vacuum Congress Berlin 2003

AU - Lyubin, V.

AU - Klebanov, M.

AU - Feigel, A.

AU - Sfez, B.

N1 - Funding Information: This research was supported by the Israel Science Foundation (grant No 388/00-1).

PY - 2004/7/1

Y1 - 2004/7/1

N2 - The photoinduced phenomena in films of chalcogenide glassy semiconductors (ChGS) was analyzed. The applications of these films for fabrication of IR microlens arrays and photonic-band-gap crystals were discussed. It was concluded that the observed anisotropy of photoconductivity is due to anisotropy of the carriers' mobility. The results show that ChGS open new possibilities in the development of different efficient electrooptical devices.

AB - The photoinduced phenomena in films of chalcogenide glassy semiconductors (ChGS) was analyzed. The applications of these films for fabrication of IR microlens arrays and photonic-band-gap crystals were discussed. It was concluded that the observed anisotropy of photoconductivity is due to anisotropy of the carriers' mobility. The results show that ChGS open new possibilities in the development of different efficient electrooptical devices.

KW - Chalcogenide glassy films

KW - Microlens arrays

KW - Photodoping

KW - Photoinduced anisotropy

KW - Photoinduced structural transformations

KW - Photonic-band-gap crystals

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

Y2 - 23 June 2004 through 26 June 2004

ER -

Films of chalcogenide glassy semiconductors: New phenomena and new applications

Abstract

Bibliographical note

Keywords

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