TY - JOUR
T1 - Following directly the effect of the various deep states on the phototransport properties of a-Si:H
AU - Lubianiker, Y.
AU - Balberg, I.
AU - Fefer, E.
AU - Shapira, Y.
PY - 1996/5
Y1 - 1996/5
N2 - Undoped samples of a-Si:H were studied by the surface photovoltage spectroscopy (SPS) and the photocarrier grating (PCG) techniques, before and after light soaking. It was found that prior to degradation two distinct deep localized levels can be detected, and that the main effect of light soaking is to create states which lie between them. However, there are more subtle features to light soaking so that in materials which are very similar otherwise, different concentration ratios of neutral to charged dangling bond are created during degradation.
AB - Undoped samples of a-Si:H were studied by the surface photovoltage spectroscopy (SPS) and the photocarrier grating (PCG) techniques, before and after light soaking. It was found that prior to degradation two distinct deep localized levels can be detected, and that the main effect of light soaking is to create states which lie between them. However, there are more subtle features to light soaking so that in materials which are very similar otherwise, different concentration ratios of neutral to charged dangling bond are created during degradation.
UR - http://www.scopus.com/inward/record.url?scp=0030563356&partnerID=8YFLogxK
U2 - 10.1016/0022-3093(95)00693-1
DO - 10.1016/0022-3093(95)00693-1
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AN - SCOPUS:0030563356
SN - 0022-3093
VL - 198-200
SP - 309
EP - 312
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - PART 1
ER -