Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask

Lin Pang; Maziar Nezhad; Uriel Levy; Chia Ho Tsai; Yeshaiahu Fainman

doi:10.1364/AO.44.002377

Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask

Lin Pang^*
, Maziar Nezhad
, Uriel Levy
, Chia Ho Tsai
, Yeshaiahu Fainman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A thin layer of a SU-8 submicrometer pattern produced by holographic lithography was directly used as the dry-etching mask in a chemically assisted ion-beam-etching system. With optimized etching parameters, etching selectivity of 7:1 was achieved together with a smooth vertical profile. As an application, a half-wavelength retardation plate for a 1.55-μm wavelength was produced and evaluated.

Original language	English
Pages (from-to)	2377-2381
Number of pages	5
Journal	Applied Optics
Volume	44
Issue number	12
DOIs	https://doi.org/10.1364/AO.44.002377
State	Published - 20 Apr 2005
Externally published	Yes

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10.1364/AO.44.002377

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abstract = "A thin layer of a SU-8 submicrometer pattern produced by holographic lithography was directly used as the dry-etching mask in a chemically assisted ion-beam-etching system. With optimized etching parameters, etching selectivity of 7:1 was achieved together with a smooth vertical profile. As an application, a half-wavelength retardation plate for a 1.55-μm wavelength was produced and evaluated.",

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AU - Pang, Lin

AU - Nezhad, Maziar

AU - Levy, Uriel

AU - Tsai, Chia Ho

AU - Fainman, Yeshaiahu

PY - 2005/4/20

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AB - A thin layer of a SU-8 submicrometer pattern produced by holographic lithography was directly used as the dry-etching mask in a chemically assisted ion-beam-etching system. With optimized etching parameters, etching selectivity of 7:1 was achieved together with a smooth vertical profile. As an application, a half-wavelength retardation plate for a 1.55-μm wavelength was produced and evaluated.

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Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask

Abstract

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