Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask

Keyphrases

• Gallium Arsenide 100%
• Form Birefringence 100%
• SU-8 100%
• Etching Mask 100%
• Dry Etching 100%
• Holographic Lithography 50%
• Vertical Profile 50%
• Sub-micrometer 50%
• Chemically Assisted Ion Beam Etching 50%
• Half-wavelength 50%
• Etch Selectivity 50%
• Retardation Plate 50%
• Etching Parameters 50%

Engineering

• Gallium Arsenide 100%
• Dry Etching 100%
• Retardation 50%
• Lithography 50%
• Thin Layer 50%
• Half Wavelength 50%

Material Science

• Gallium Arsenide 100%
• Birefringence 100%
• Dry Etching 100%
• Lithography 50%