Formation of Pd2Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry

M. Molina-Ruiz*, A. F. Lopeandía, M. González-Silveira, Y. Anahory, M. Guihard, G. Garcia, M. T. Clavaguera-Mora, F. Schiettekatte, J. Rodríguez-Viejo

*Corresponding author for this work

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The kinetics of intermediate phase formation between ultrathin films of Pd (12 nm) and single-crystalline Si (100) is monitored by in-situ nanocalorimetry at ultrafast heating rates. The heat capacity curves show an exothermic peak related to the formation of Pd2Si. A kinetic model which goes beyond the conventional linear-parabolic growth to consider independent nucleation and lateral growth of Pd2Si along the interface and vertical growth mechanisms is developed to fit the calorimetric curves. The model is used to extract the effective interfacial nucleation/growth and diffusion coefficients at the unusually high temperatures of silicide formation achieved at very fast heating rates.

Original languageAmerican English
Article number143111
JournalApplied Physics Letters
Issue number14
StatePublished - 8 Apr 2013
Externally publishedYes

Bibliographical note

Funding Information:
Researchers from GNaM acknowledge financial support from Generalitat de Catalunya and Ministerio de Economía y Competitividad through Grants SGR2009-01225 and MAT2010-15225, respectively, and from Marie Curie European Reintegration Grant within the 7th European Community Framework Programme. Researchers from RQMP acknowledge funding from FQRNT and NRSEC. The authors acknowledge the Cornell Nanofabrication Facility and the Laboratoire de nanofabrication of the École Polytechnique de Montreal for chip microfabrication, as well as the Servei de Microscòpia from the Universitat Autònoma de Barcelona for sample preparation and microscopy images.


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