Formation of Pd2Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry

M. Molina-Ruiz; A. F. Lopeandía; M. González-Silveira; Y. Anahory; M. Guihard; G. Garcia; M. T. Clavaguera-Mora; F. Schiettekatte; J. Rodríguez-Viejo

doi:10.1063/1.4800934

Formation of Pd₂Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry

M. Molina-Ruiz^*, A. F. Lopeandía, M. González-Silveira, Y. Anahory, M. Guihard, G. Garcia, M. T. Clavaguera-Mora, F. Schiettekatte, J. Rodríguez-Viejo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The kinetics of intermediate phase formation between ultrathin films of Pd (12 nm) and single-crystalline Si (100) is monitored by in-situ nanocalorimetry at ultrafast heating rates. The heat capacity curves show an exothermic peak related to the formation of Pd₂Si. A kinetic model which goes beyond the conventional linear-parabolic growth to consider independent nucleation and lateral growth of Pd₂Si along the interface and vertical growth mechanisms is developed to fit the calorimetric curves. The model is used to extract the effective interfacial nucleation/growth and diffusion coefficients at the unusually high temperatures of silicide formation achieved at very fast heating rates.

Original language	English
Article number	143111
Journal	Applied Physics Letters
Volume	102
Issue number	14
DOIs	https://doi.org/10.1063/1.4800934
State	Published - 8 Apr 2013
Externally published	Yes

Bibliographical note

Funding Information:
Researchers from GNaM acknowledge financial support from Generalitat de Catalunya and Ministerio de Economía y Competitividad through Grants SGR2009-01225 and MAT2010-15225, respectively, and from Marie Curie European Reintegration Grant within the 7th European Community Framework Programme. Researchers from RQMP acknowledge funding from FQRNT and NRSEC. The authors acknowledge the Cornell Nanofabrication Facility and the Laboratoire de nanofabrication of the École Polytechnique de Montreal for chip microfabrication, as well as the Servei de Microscòpia from the Universitat Autònoma de Barcelona for sample preparation and microscopy images.

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Molina-Ruiz, M., Lopeandía, A. F., González-Silveira, M., Anahory, Y., Guihard, M., Garcia, G., Clavaguera-Mora, M. T., Schiettekatte, F., & Rodríguez-Viejo, J. (2013). Formation of Pd₂Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry. Applied Physics Letters, 102(14), Article 143111. https://doi.org/10.1063/1.4800934

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title = "Formation of Pd2Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry",

abstract = "The kinetics of intermediate phase formation between ultrathin films of Pd (12 nm) and single-crystalline Si (100) is monitored by in-situ nanocalorimetry at ultrafast heating rates. The heat capacity curves show an exothermic peak related to the formation of Pd2Si. A kinetic model which goes beyond the conventional linear-parabolic growth to consider independent nucleation and lateral growth of Pd2Si along the interface and vertical growth mechanisms is developed to fit the calorimetric curves. The model is used to extract the effective interfacial nucleation/growth and diffusion coefficients at the unusually high temperatures of silicide formation achieved at very fast heating rates.",

author = "M. Molina-Ruiz and Lopeand{\'i}a, {A. F.} and M. Gonz{\'a}lez-Silveira and Y. Anahory and M. Guihard and G. Garcia and Clavaguera-Mora, {M. T.} and F. Schiettekatte and J. Rodr{\'i}guez-Viejo",

note = "Funding Information: Researchers from GNaM acknowledge financial support from Generalitat de Catalunya and Ministerio de Econom{\'i}a y Competitividad through Grants SGR2009-01225 and MAT2010-15225, respectively, and from Marie Curie European Reintegration Grant within the 7th European Community Framework Programme. Researchers from RQMP acknowledge funding from FQRNT and NRSEC. The authors acknowledge the Cornell Nanofabrication Facility and the Laboratoire de nanofabrication of the {\'E}cole Polytechnique de Montreal for chip microfabrication, as well as the Servei de Microsc{\`o}pia from the Universitat Aut{\`o}noma de Barcelona for sample preparation and microscopy images.",

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AU - Garcia, G.

AU - Clavaguera-Mora, M. T.

AU - Schiettekatte, F.

AU - Rodríguez-Viejo, J.

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AB - The kinetics of intermediate phase formation between ultrathin films of Pd (12 nm) and single-crystalline Si (100) is monitored by in-situ nanocalorimetry at ultrafast heating rates. The heat capacity curves show an exothermic peak related to the formation of Pd2Si. A kinetic model which goes beyond the conventional linear-parabolic growth to consider independent nucleation and lateral growth of Pd2Si along the interface and vertical growth mechanisms is developed to fit the calorimetric curves. The model is used to extract the effective interfacial nucleation/growth and diffusion coefficients at the unusually high temperatures of silicide formation achieved at very fast heating rates.

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Formation of Pd₂Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry

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