Four-wave mixing and nonlinear parameter measurement in a gallium-nitride ridge waveguide

Dvir Munk, Moshe Katzman, Ohad Westreich, Moran Bin Nun, Yedidya Lior, Noam Sicron, Yossi Paltiel, Avi Zadok*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently demonstrated. In this work, we provide the first report of four-wave mixing in a GaN waveguide at telecommunication wavelengths, and observe comparatively high nonlinear propagation parameters. The nonlinear coefficient of the waveguide is measured as 1.6 ± 0.45 [W × m]-1, and the corresponding third-order nonlinear parameter of GaN is estimated as 3.4 ± 1e-18 [m2/W]. The results suggest that GaN waveguides could be instrumental in nonlinear-optical signal processing applications.

Original languageAmerican English
Pages (from-to)66-72
Number of pages7
JournalOptical Materials Express
Volume8
Issue number1
DOIs
StatePublished - 2017

Bibliographical note

Publisher Copyright:
© 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.

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