Abstract
This paper discusses a significant improvement of the SOI process that can be implemented in various manners and that remedies many problems of earlier fabrication schemes. In particular the new MOEMS structures are monolithic, do not exhibit rotational snapdown, have electrical shielding between channels, and have activation voltages less than or comparable to parallel plate devices. The approach is discussed in terms of an application requiring a linear array of closely-spaced cantilever mirrors.
Original language | English |
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Title of host publication | 2003 IEEE/LEOS International Conference on Optical MEMS |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 91-92 |
Number of pages | 2 |
ISBN (Electronic) | 078037830X, 9780780378308 |
DOIs | |
State | Published - 2003 |
Externally published | Yes |
Event | 2003 IEEE/LEOS International Conference on Optical MEMS - Waikoloa, United States Duration: 18 Aug 2003 → 21 Aug 2003 |
Publication series
Name | 2003 IEEE/LEOS International Conference on Optical MEMS |
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Conference
Conference | 2003 IEEE/LEOS International Conference on Optical MEMS |
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Country/Territory | United States |
City | Waikoloa |
Period | 18/08/03 → 21/08/03 |
Bibliographical note
Publisher Copyright:© 2003 IEEE.
Keywords
- Dielectric substrates
- Electrodes
- Electrostatics
- Etching
- Micromechanical devices
- Mirrors
- Research and development
- Silicon
- Springs
- Voltage