Fringe-field-activated SOI tilting mirrors

D. S. Greywall, Chien Shing Pai, Sang Hyun Oh, Chorng Ping Chang, D. M. Marom, S. Stanton, P. A. Busch, R. A. Cirelli, J. A. Taylor, F. P. Klemens, T. W. Sorsch, J. E. Bower, W. Y.C. Lai, H. T. Soh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper discusses a significant improvement of the SOI process that can be implemented in various manners and that remedies many problems of earlier fabrication schemes. In particular the new MOEMS structures are monolithic, do not exhibit rotational snapdown, have electrical shielding between channels, and have activation voltages less than or comparable to parallel plate devices. The approach is discussed in terms of an application requiring a linear array of closely-spaced cantilever mirrors.

Original languageAmerican English
Title of host publication2003 IEEE/LEOS International Conference on Optical MEMS
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages91-92
Number of pages2
ISBN (Electronic)078037830X, 9780780378308
DOIs
StatePublished - 2003
Externally publishedYes
Event2003 IEEE/LEOS International Conference on Optical MEMS - Waikoloa, United States
Duration: 18 Aug 200321 Aug 2003

Publication series

Name2003 IEEE/LEOS International Conference on Optical MEMS

Conference

Conference2003 IEEE/LEOS International Conference on Optical MEMS
Country/TerritoryUnited States
CityWaikoloa
Period18/08/0321/08/03

Bibliographical note

Publisher Copyright:
© 2003 IEEE.

Keywords

  • Dielectric substrates
  • Electrodes
  • Electrostatics
  • Etching
  • Micromechanical devices
  • Mirrors
  • Research and development
  • Silicon
  • Springs
  • Voltage

Fingerprint

Dive into the research topics of 'Fringe-field-activated SOI tilting mirrors'. Together they form a unique fingerprint.

Cite this