Fundamental transport processes in ensembles of silicon quantum dots

I. Balberg*, E. Savir, J. Jedrzejewski, A. G. Nassiopoulou, S. Gardelis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

For a better understanding of the physical properties of semiconductor quantum dot ensembles, we have followed the behaviors of the transport and photoluminescence above, at, and below the percolation threshold of ensembles of Si quantum dots that are embedded in a Si O2 matrix. Our study revealed the roles of the interdot conduction, the single dot charging, and the connectivity in such systems. We conclude that while the first two determine the global transport, a connectivity dependent migration determines the coupling between the electrical and optical properties.

Original languageEnglish
Article number235329
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number23
DOIs
StatePublished - 27 Jun 2007

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