GaSb homojunctions for far-infrared (terahertz) detection

P. V.V. Jayaweera; S. G. Matsik; A. G.U. Perera; Y. Paltiel; Ariel Sher; Arie Raizman; H. Luo; H. C. Liu

doi:10.1063/1.2713760

GaSb homojunctions for far-infrared (terahertz) detection

P. V.V. Jayaweera^*, S. G. Matsik, A. G.U. Perera, Y. Paltiel, Ariel Sher, Arie Raizman, H. Luo, H. C. Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A GaSb based homojunction interfacial work function internal photoemission far-infrared (>30 μm) detector is presented. Metal-organic vapor phase epitaxy grown p-GaSbGaSb samples show 9.7 AW peak responsivity and a peak detectivity of 5.7× 1011 Jones with effective quantum efficiency of 33% at 36 μm and 4.9 K. The detector exhibits a 97 μm (∼3 THz) free carrier response threshold wavelength. Results indicate that p-GaSb homojunction internal work function internal photoemission detectors are promising candidates to be a competitor for terahertz applications.

Original language	English
Article number	111109
Journal	Applied Physics Letters
Volume	90
Issue number	11
DOIs	https://doi.org/10.1063/1.2713760
State	Published - 2007
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported in part by the U.S. NSF under Grant Nos. ECS 05-53051, INT-0322355 and OISE 054325. The Soreq NRC group would like to thank the outstanding technical support of Shmuel Saad for the metal-organic chemical vapor deposition maintenance and Galit Shturm for the fabrication process.

Access to Document

10.1063/1.2713760

Cite this

@article{b2768d7b7cd24765bf15abbaa1356439,

title = "GaSb homojunctions for far-infrared (terahertz) detection",

abstract = "A GaSb based homojunction interfacial work function internal photoemission far-infrared (>30 μm) detector is presented. Metal-organic vapor phase epitaxy grown p-GaSbGaSb samples show 9.7 AW peak responsivity and a peak detectivity of 5.7× 1011 Jones with effective quantum efficiency of 33% at 36 μm and 4.9 K. The detector exhibits a 97 μm (∼3 THz) free carrier response threshold wavelength. Results indicate that p-GaSb homojunction internal work function internal photoemission detectors are promising candidates to be a competitor for terahertz applications.",

author = "Jayaweera, {P. V.V.} and Matsik, {S. G.} and Perera, {A. G.U.} and Y. Paltiel and Ariel Sher and Arie Raizman and H. Luo and Liu, {H. C.}",

note = "Funding Information: This work was supported in part by the U.S. NSF under Grant Nos. ECS 05-53051, INT-0322355 and OISE 054325. The Soreq NRC group would like to thank the outstanding technical support of Shmuel Saad for the metal-organic chemical vapor deposition maintenance and Galit Shturm for the fabrication process. ",

year = "2007",

doi = "10.1063/1.2713760",

language = "אנגלית",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - GaSb homojunctions for far-infrared (terahertz) detection

AU - Jayaweera, P. V.V.

AU - Matsik, S. G.

AU - Perera, A. G.U.

AU - Paltiel, Y.

AU - Sher, Ariel

AU - Raizman, Arie

AU - Luo, H.

AU - Liu, H. C.

N1 - Funding Information: This work was supported in part by the U.S. NSF under Grant Nos. ECS 05-53051, INT-0322355 and OISE 054325. The Soreq NRC group would like to thank the outstanding technical support of Shmuel Saad for the metal-organic chemical vapor deposition maintenance and Galit Shturm for the fabrication process.

PY - 2007

Y1 - 2007

N2 - A GaSb based homojunction interfacial work function internal photoemission far-infrared (>30 μm) detector is presented. Metal-organic vapor phase epitaxy grown p-GaSbGaSb samples show 9.7 AW peak responsivity and a peak detectivity of 5.7× 1011 Jones with effective quantum efficiency of 33% at 36 μm and 4.9 K. The detector exhibits a 97 μm (∼3 THz) free carrier response threshold wavelength. Results indicate that p-GaSb homojunction internal work function internal photoemission detectors are promising candidates to be a competitor for terahertz applications.

AB - A GaSb based homojunction interfacial work function internal photoemission far-infrared (>30 μm) detector is presented. Metal-organic vapor phase epitaxy grown p-GaSbGaSb samples show 9.7 AW peak responsivity and a peak detectivity of 5.7× 1011 Jones with effective quantum efficiency of 33% at 36 μm and 4.9 K. The detector exhibits a 97 μm (∼3 THz) free carrier response threshold wavelength. Results indicate that p-GaSb homojunction internal work function internal photoemission detectors are promising candidates to be a competitor for terahertz applications.

UR - http://www.scopus.com/inward/record.url?scp=33947312328&partnerID=8YFLogxK

U2 - 10.1063/1.2713760

DO - 10.1063/1.2713760

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:33947312328

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111109

ER -

GaSb homojunctions for far-infrared (terahertz) detection

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this