A GaSb based homojunction interfacial work function internal photoemission far-infrared (>30 μm) detector is presented. Metal-organic vapor phase epitaxy grown p-GaSbGaSb samples show 9.7 AW peak responsivity and a peak detectivity of 5.7× 1011 Jones with effective quantum efficiency of 33% at 36 μm and 4.9 K. The detector exhibits a 97 μm (∼3 THz) free carrier response threshold wavelength. Results indicate that p-GaSb homojunction internal work function internal photoemission detectors are promising candidates to be a competitor for terahertz applications.
Bibliographical noteFunding Information:
This work was supported in part by the U.S. NSF under Grant Nos. ECS 05-53051, INT-0322355 and OISE 054325. The Soreq NRC group would like to thank the outstanding technical support of Shmuel Saad for the metal-organic chemical vapor deposition maintenance and Galit Shturm for the fabrication process.