Generation and anneal of a new kind of interface state in stressed and high-temperature annealed metal-oxide-semiconductor devices

Keyphrases

• Annealing 100%
• High Temperature 100%
• Interface States 100%
• Metal-oxide-semiconductor Devices 100%
• Saturation Value 50%
• Generation Rate 50%
• Tunneling 33%
• Temperature Effect 16%
• Temperature Range 16%
• Activation Energy 16%
• Charge Pump 16%
• Generation Process 16%
• Metal-oxide-semiconductor Transistor 16%
• Polysilicon 16%
• Thermal Treatment 16%
• Capacitance-voltage Curve 16%
• Constant Current 16%
• Interface Generation 16%
• Higher Generation 16%
• Annealing Time 16%
• Gate Metal 16%
• Pumping Technique 16%
• Annealing Rate 16%
• Arrhenius Function 16%

Material Science

• Annealing 100%
• Metal Oxide 100%
• Semiconductor Device 100%
• Oxide Semiconductor 100%
• Density 50%
• Activation Energy 50%
• Silicon 50%
• Capacitance 50%
• Transistor 50%

Engineering

• Interface State 100%
• Metal oxide semiconductor devices 100%
• Saturation Value 50%
• Tunnel Construction 33%
• Broadening 16%
• Arrhenius 16%
• Activation Energy 16%
• Temperature Range 16%
• Metal Oxide Semiconductor 16%
• Generated Stress 16%
• Heat Treatment 16%
• Polysilicon 16%
• Annealing Time 16%