Abstract
Poly silicon gate MOS transistors were stressed by Fowler-Nordheira tunneling injection. The stress generated interface states density as a function of the injected charge was measured both by the browdening of the C-V curve and by the charge pumping technique. Following the stress process, the devices which had poly silicon metallization were treated at elevated temperatures to anneal the generated interface states. As expected the annealed devices had electrical characteristics similar to the fresh devices. However, repeated stress after the anneal show marked increase in interface state generation. The new interface states are of two types; one of the same nature and density as in the fresh device and one of faster generation rate with density which decreases with the increase of anneal temperature and the increase in anneal time. From Arenius plot an activation energy of 3.47± 0.05ev was obtained for the annealing process of the new type of interface states.
Original language | English |
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Title of host publication | Proceedings - 17th Convention of Electrical and Electronics Engineers in Israel, EEIS 1991 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 73-75 |
Number of pages | 3 |
ISBN (Electronic) | 0879426780, 9780879426781 |
DOIs | |
State | Published - 1991 |
Event | 17th Convention of Electrical and Electronics Engineers in Israel, EEIS 1991 - Tel Aviv, Israel Duration: 5 Mar 1991 → 7 Mar 1991 |
Publication series
Name | Proceedings - 17th Convention of Electrical and Electronics Engineers in Israel, EEIS 1991 |
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Conference
Conference | 17th Convention of Electrical and Electronics Engineers in Israel, EEIS 1991 |
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Country/Territory | Israel |
City | Tel Aviv |
Period | 5/03/91 → 7/03/91 |
Bibliographical note
Publisher Copyright:© Proceedings - 17th Convention of Electrical and Electronics Engineers in Israel, EEIS 1991. All rights reserved.