Geometric model of crystal growth between rigid walls III. Kinetic faceting in presence of preferred interface inclination

A. J. Vilenkin*, A. Brokman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this part of the work, we consider a Landau-Ginzburg Hamiltonian of the interface with an ad hoc second order curvature term. An extended kinetic equation is derived from the new Hamiltonian. In the limit when the new potential vanishes, this equation enables the prediction of interface steady state motion whereas the analysis of the previous part of this work yields an unstable solution associated with a preferred inclination. In this case, the faceted steady state interface is stabilized by a corner which maintains a mechanical equilibrium. Although appended for mathematical convenience, the new potential may represent a bulk resistance to lattice distortions associated with interface curvature. Then, the effect of the bulk force is to smooth the curvature discontinuity at the corner by means of a second, narrow, boundary layer formation.

Original languageEnglish
Pages (from-to)239-246
Number of pages8
JournalJournal of Crystal Growth
Volume131
Issue number1-2
DOIs
StatePublished - Jul 1993

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