Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures

Tiancheng Song; Xinghan Cai; Matisse Wei Yuan Tu; Xiaoou Zhang; Bevin Huang; Nathan P. Wilson; Kyle L. Seyler; Lin Zhu; Takashi Taniguchi; Kenji Watanabe; Michael A. McGuire; David H. Cobden; Di Xiao; Wang Yao; Xiaodong Xu

doi:10.1126/science.aar4851

Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures

Tiancheng Song, Xinghan Cai, Matisse Wei Yuan Tu, Xiaoou Zhang, Bevin Huang, Nathan P. Wilson, Kyle L. Seyler, Lin Zhu, Takashi Taniguchi, Kenji Watanabe, Michael A. McGuire, David H. Cobden, Di Xiao^*, Wang Yao, Xiaodong Xu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

923 Scopus citations

Abstract

Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI ₃ ) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance that is drastically enhanced with increasing CrI ₃ layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI ₃ . Our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI ₃ as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.

Original language	English
Pages (from-to)	1214-1218
Number of pages	5
Journal	Science
Volume	360
Issue number	6394
DOIs	https://doi.org/10.1126/science.aar4851
State	Published - 2018
Externally published	Yes

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© 2018 American Association for the Advancement of Science. All Rights Reserved.

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title = "Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures",

abstract = " Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI 3 ) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance that is drastically enhanced with increasing CrI 3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI 3 . Our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI 3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.",

author = "Tiancheng Song and Xinghan Cai and Tu, {Matisse Wei Yuan} and Xiaoou Zhang and Bevin Huang and Wilson, {Nathan P.} and Seyler, {Kyle L.} and Lin Zhu and Takashi Taniguchi and Kenji Watanabe and McGuire, {Michael A.} and Cobden, {David H.} and Di Xiao and Wang Yao and Xiaodong Xu",

year = "2018",

doi = "10.1126/science.aar4851",

language = "אנגלית",

volume = "360",

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AU - Song, Tiancheng

AU - Cai, Xinghan

AU - Tu, Matisse Wei Yuan

AU - Zhang, Xiaoou

AU - Huang, Bevin

AU - Wilson, Nathan P.

AU - Seyler, Kyle L.

AU - Zhu, Lin

AU - Taniguchi, Takashi

AU - Watanabe, Kenji

AU - McGuire, Michael A.

AU - Cobden, David H.

AU - Xiao, Di

AU - Yao, Wang

AU - Xu, Xiaodong

PY - 2018

Y1 - 2018

N2 - Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI 3 ) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance that is drastically enhanced with increasing CrI 3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI 3 . Our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI 3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.

AB - Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI 3 ) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance that is drastically enhanced with increasing CrI 3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI 3 . Our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI 3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.

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IS - 6394

ER -

Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures

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