Glassy mAs2S3·nAs2Se3 photoresist films for interference laser lithography

A. Arsh, M. Klebanov, V. Lyubin*, L. Shapiro, A. Feigel, M. Veinger, B. Sfez

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


Spectra of refractive index and selective dissolution of several glassy mAs2S3·nAs2Se3 films are studied. These results permitted to select efficient photoresist compositions for interference laser lithography, performed with Ar+-, He-Ne- and Nd:YAG-laser beams, and to fabricate the two- and three-dimensional photonic crystals.

Original languageAmerican English
Pages (from-to)301-304
Number of pages4
JournalOptical Materials
Issue number3
StatePublished - Aug 2004
Externally publishedYes

Bibliographical note

Funding Information:
This work was partially supported by the Israel Ministry of Science.


  • Chalcogenide glassy films
  • Interference laser lithography
  • Photonic crystals
  • Spectra of refractive index


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