Graphene-based positron charge sensor

P. Or; D. Dribin; T. R. Devidas; A. Zalic; K. Watanabe; T. Taniguchi; S. May-Tal Beck; G. Ron; H. Steinberg

doi:10.1063/1.5053477

Graphene-based positron charge sensor

P. Or, D. Dribin, T. R. Devidas, A. Zalic, K. Watanabe, T. Taniguchi, S. May-Tal Beck, G. Ron, H. Steinberg^*

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We utilize a graphene field-effect transistor to measure back-gate charging by positrons. The device consists of an exfoliated graphene flake transferred onto hexagonal Boron Nitride, placed on a 1 cm² substrate of 500 μm thick conducting p-Si capped by 285 nm-thick SiO₂. It is placed at close proximity to a 25 μCi ²²Na positron source emitting a constant flux of positrons, which during the measurement annihilate within the back-gate. We demonstrate that when the back-gate is allowed to float, the charging current of ≈20 fA causes the buildup of positive charge which capacitively couples to the graphene device and is detected as a variation in the two-terminal conductance. Furthermore, a prolonged exposure to positrons causes a shift in the graphene transport characteristics, associated with local charges at the immediate environment of the graphene flake. Our results demonstrate the utility of two-dimensional layered materials as probes for charging dynamics of positrons in solids.

Original language	American English
Article number	154101
Journal	Applied Physics Letters
Volume	113
Issue number	15
DOIs	https://doi.org/10.1063/1.5053477
State	Published - 8 Oct 2018

Bibliographical note

Funding Information:
The authors are thankful for stimulating discussions with Or Hen. The device fabrication and characterization were carried out at the Harvey M. Krueger Family Center for Nanoscience and Nanotechnology. This work was supported by the Israel Science Foundation Grant No. 1363/15 and Marie Curie CIG Grant No. PCIG12-GA-2012-333620. P.O. and D.D. were supported by the HUJI Nano Center M.Sc. Fellowship Program. T.R.D. acknowledges support from the Lady Davis Postdoctoral Fellowship program. K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, and the CREST (No. JPMJCR15F3), JST.

Funding Information:
This work was supported by the Israel Science Foundation Grant No. 1363/15 and Marie Curie CIG Grant No. PCIG12-GA-2012-333620. P.O. and D.D. were supported by the HUJI Nano Center M.Sc. Fellowship Program. T.R.D. acknowledges support from the Lady Davis Postdoctoral Fellowship program. K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, and the CREST (No. JPMJCR15F3), JST.

Publisher Copyright:
© 2018 Author(s).

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10.1063/1.5053477

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title = "Graphene-based positron charge sensor",

abstract = "We utilize a graphene field-effect transistor to measure back-gate charging by positrons. The device consists of an exfoliated graphene flake transferred onto hexagonal Boron Nitride, placed on a 1 cm2 substrate of 500 μm thick conducting p-Si capped by 285 nm-thick SiO2. It is placed at close proximity to a 25 μCi 22Na positron source emitting a constant flux of positrons, which during the measurement annihilate within the back-gate. We demonstrate that when the back-gate is allowed to float, the charging current of ≈20 fA causes the buildup of positive charge which capacitively couples to the graphene device and is detected as a variation in the two-terminal conductance. Furthermore, a prolonged exposure to positrons causes a shift in the graphene transport characteristics, associated with local charges at the immediate environment of the graphene flake. Our results demonstrate the utility of two-dimensional layered materials as probes for charging dynamics of positrons in solids.",

author = "P. Or and D. Dribin and Devidas, {T. R.} and A. Zalic and K. Watanabe and T. Taniguchi and {May-Tal Beck}, S. and G. Ron and H. Steinberg",

note = "Funding Information: The authors are thankful for stimulating discussions with Or Hen. The device fabrication and characterization were carried out at the Harvey M. Krueger Family Center for Nanoscience and Nanotechnology. This work was supported by the Israel Science Foundation Grant No. 1363/15 and Marie Curie CIG Grant No. PCIG12-GA-2012-333620. P.O. and D.D. were supported by the HUJI Nano Center M.Sc. Fellowship Program. T.R.D. acknowledges support from the Lady Davis Postdoctoral Fellowship program. K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, and the CREST (No. JPMJCR15F3), JST. Funding Information: This work was supported by the Israel Science Foundation Grant No. 1363/15 and Marie Curie CIG Grant No. PCIG12-GA-2012-333620. P.O. and D.D. were supported by the HUJI Nano Center M.Sc. Fellowship Program. T.R.D. acknowledges support from the Lady Davis Postdoctoral Fellowship program. K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, and the CREST (No. JPMJCR15F3), JST. Publisher Copyright: {\textcopyright} 2018 Author(s).",

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AU - May-Tal Beck, S.

AU - Ron, G.

AU - Steinberg, H.

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N2 - We utilize a graphene field-effect transistor to measure back-gate charging by positrons. The device consists of an exfoliated graphene flake transferred onto hexagonal Boron Nitride, placed on a 1 cm2 substrate of 500 μm thick conducting p-Si capped by 285 nm-thick SiO2. It is placed at close proximity to a 25 μCi 22Na positron source emitting a constant flux of positrons, which during the measurement annihilate within the back-gate. We demonstrate that when the back-gate is allowed to float, the charging current of ≈20 fA causes the buildup of positive charge which capacitively couples to the graphene device and is detected as a variation in the two-terminal conductance. Furthermore, a prolonged exposure to positrons causes a shift in the graphene transport characteristics, associated with local charges at the immediate environment of the graphene flake. Our results demonstrate the utility of two-dimensional layered materials as probes for charging dynamics of positrons in solids.

AB - We utilize a graphene field-effect transistor to measure back-gate charging by positrons. The device consists of an exfoliated graphene flake transferred onto hexagonal Boron Nitride, placed on a 1 cm2 substrate of 500 μm thick conducting p-Si capped by 285 nm-thick SiO2. It is placed at close proximity to a 25 μCi 22Na positron source emitting a constant flux of positrons, which during the measurement annihilate within the back-gate. We demonstrate that when the back-gate is allowed to float, the charging current of ≈20 fA causes the buildup of positive charge which capacitively couples to the graphene device and is detected as a variation in the two-terminal conductance. Furthermore, a prolonged exposure to positrons causes a shift in the graphene transport characteristics, associated with local charges at the immediate environment of the graphene flake. Our results demonstrate the utility of two-dimensional layered materials as probes for charging dynamics of positrons in solids.

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JF - Applied Physics Letters

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ER -

Graphene-based positron charge sensor

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