Graphene-based positron charge sensor

P. Or; D. Dribin; T. R. Devidas; A. Zalic; K. Watanabe; T. Taniguchi; S. May-Tal Beck; G. Ron; H. Steinberg

doi:10.1063/1.5053477

Graphene-based positron charge sensor

P. Or
, D. Dribin
, T. R. Devidas
, A. Zalic
, K. Watanabe
, T. Taniguchi
, S. May-Tal Beck
, G. Ron
, H. Steinberg^*

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We utilize a graphene field-effect transistor to measure back-gate charging by positrons. The device consists of an exfoliated graphene flake transferred onto hexagonal Boron Nitride, placed on a 1 cm² substrate of 500 μm thick conducting p-Si capped by 285 nm-thick SiO₂. It is placed at close proximity to a 25 μCi ²²Na positron source emitting a constant flux of positrons, which during the measurement annihilate within the back-gate. We demonstrate that when the back-gate is allowed to float, the charging current of ≈20 fA causes the buildup of positive charge which capacitively couples to the graphene device and is detected as a variation in the two-terminal conductance. Furthermore, a prolonged exposure to positrons causes a shift in the graphene transport characteristics, associated with local charges at the immediate environment of the graphene flake. Our results demonstrate the utility of two-dimensional layered materials as probes for charging dynamics of positrons in solids.

Original language	English
Article number	154101
Journal	Applied Physics Letters
Volume	113
Issue number	15
DOIs	https://doi.org/10.1063/1.5053477
State	Published - 8 Oct 2018

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© 2018 Author(s).

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10.1063/1.5053477

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title = "Graphene-based positron charge sensor",

abstract = "We utilize a graphene field-effect transistor to measure back-gate charging by positrons. The device consists of an exfoliated graphene flake transferred onto hexagonal Boron Nitride, placed on a 1 cm2 substrate of 500 μm thick conducting p-Si capped by 285 nm-thick SiO2. It is placed at close proximity to a 25 μCi 22Na positron source emitting a constant flux of positrons, which during the measurement annihilate within the back-gate. We demonstrate that when the back-gate is allowed to float, the charging current of ≈20 fA causes the buildup of positive charge which capacitively couples to the graphene device and is detected as a variation in the two-terminal conductance. Furthermore, a prolonged exposure to positrons causes a shift in the graphene transport characteristics, associated with local charges at the immediate environment of the graphene flake. Our results demonstrate the utility of two-dimensional layered materials as probes for charging dynamics of positrons in solids.",

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AU - Or, P.

AU - Dribin, D.

AU - Devidas, T. R.

AU - Zalic, A.

AU - Watanabe, K.

AU - Taniguchi, T.

AU - May-Tal Beck, S.

AU - Ron, G.

AU - Steinberg, H.

PY - 2018/10/8

Y1 - 2018/10/8

N2 - We utilize a graphene field-effect transistor to measure back-gate charging by positrons. The device consists of an exfoliated graphene flake transferred onto hexagonal Boron Nitride, placed on a 1 cm2 substrate of 500 μm thick conducting p-Si capped by 285 nm-thick SiO2. It is placed at close proximity to a 25 μCi 22Na positron source emitting a constant flux of positrons, which during the measurement annihilate within the back-gate. We demonstrate that when the back-gate is allowed to float, the charging current of ≈20 fA causes the buildup of positive charge which capacitively couples to the graphene device and is detected as a variation in the two-terminal conductance. Furthermore, a prolonged exposure to positrons causes a shift in the graphene transport characteristics, associated with local charges at the immediate environment of the graphene flake. Our results demonstrate the utility of two-dimensional layered materials as probes for charging dynamics of positrons in solids.

AB - We utilize a graphene field-effect transistor to measure back-gate charging by positrons. The device consists of an exfoliated graphene flake transferred onto hexagonal Boron Nitride, placed on a 1 cm2 substrate of 500 μm thick conducting p-Si capped by 285 nm-thick SiO2. It is placed at close proximity to a 25 μCi 22Na positron source emitting a constant flux of positrons, which during the measurement annihilate within the back-gate. We demonstrate that when the back-gate is allowed to float, the charging current of ≈20 fA causes the buildup of positive charge which capacitively couples to the graphene device and is detected as a variation in the two-terminal conductance. Furthermore, a prolonged exposure to positrons causes a shift in the graphene transport characteristics, associated with local charges at the immediate environment of the graphene flake. Our results demonstrate the utility of two-dimensional layered materials as probes for charging dynamics of positrons in solids.

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Graphene-based positron charge sensor

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