Graphene Photo Memtransistor Based on CMOS Flash Memory Technology with Neuromorphic Applications

Christian Frydendahl*, S. R.K.Chaitanya Indukuri, Meir Grajower, Noa Mazurski, Joseph Shappir, Uriel Levy*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Graphene holds a great promise for a number of diverse future applications, in particular, related to its easily tunable doping and Fermi level by electrostatic gating. However, as of today, most implementations rely on electrical doping via the application of continuous large voltages to maintain the desired doping. We show here how graphene can be implemented with conventional semiconductor flash memory technology in order to make programmable doping possible, simply by the application of short gate pulses. We also demonstrate how this approach can be used for a nonvolatile memory device and also show potential neuromorphic capabilities of the device. Finally, we show that the overall performance can be significantly enhanced by illuminating the device with UV radiation. Our approach may pave the way for integrating graphene in CMOS technology memory applications, and our device design could also be suitable for large-scale neuromorphic computing structures.

Original languageAmerican English
Pages (from-to)2659-2665
Number of pages7
JournalACS Photonics
Issue number9
StatePublished - 15 Sep 2021

Bibliographical note

Publisher Copyright:
© 2021 American Chemical Society


  • charge trapping
  • electron tunneling
  • flash memory
  • graphene
  • neuromorphic
  • ultraviolet light


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