Graphene holds a great promise for a number of diverse future applications, in particular, related to its easily tunable doping and Fermi level by electrostatic gating. However, as of today, most implementations rely on electrical doping via the application of continuous large voltages to maintain the desired doping. We show here how graphene can be implemented with conventional semiconductor flash memory technology in order to make programmable doping possible, simply by the application of short gate pulses. We also demonstrate how this approach can be used for a nonvolatile memory device and also show potential neuromorphic capabilities of the device. Finally, we show that the overall performance can be significantly enhanced by illuminating the device with UV radiation. Our approach may pave the way for integrating graphene in CMOS technology memory applications, and our device design could also be suitable for large-scale neuromorphic computing structures.
Bibliographical noteFunding Information:
We acknowledge funding from the Israeli Ministry of Science and Technology and The Air Force Office of Scientific Research. C.F. is supported by the Carlsberg Foundation as an Internationalisation Fellow. The authors would like to thank Dr. Devidas Taget Raghavendran, Ayelet Zalic and Prof. Hadar Steinberg from the Racah institute of Physics at HUJI. We also acknowledge Atzmon Vakahi and Dr. Sergei Remennik from Harvey M. Kruger Family Center of Nanoscience and Technology for assistance with the STEM imaging and FIB sample preparation.
© 2021 American Chemical Society
- charge trapping
- electron tunneling
- flash memory
- ultraviolet light