Growth Conditions for Crystal Pulling by the Czochralski Method

R. Grajower*, I. Roman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The balance of heat flow at the growth interface during Czochralski crystal pulling is discussed, taking into consideration the curvature of the interface. Mechanisms are postulated according to which sudden and slow changes in the pulling rate influence the growth process and detachment of the crystal from the melt. An expression is derived for the smallest diameter to which necking down can be carried out under stable growth conditions.

Original languageEnglish
Pages (from-to)463-468
Number of pages6
JournalIsrael Journal of Chemistry
Volume9
Issue number4
DOIs
StatePublished - 1971

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