Growth of high resistivity RbTiOPO4 crystals

  • M. Tseitlin
  • , E. Mojaev
  • , M. Roth*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

RbTiOPO4 crystals have been grown by the top-seeded solution method from self-fluxes containing [Rb]/[P] molar ratios as high as 2.3 and initial solute concentrations of 1.2 g-RTP/g-flux, corresponding to the previously unexplored part of the RTP crystallization field in the Rb2O-P2O5-TiO2 ternary system. The Curie temperatures of as-grown crystals corresponding to the high-temperature ferroelectric phase transitions have been determined using the standard dielectric (capacitance) technique and found to exceed 790 °C. The results indicate that the Curie points shift to higher values as compared with crystals grown from fluxes with lower [Rb]/[P] molar ratios, as expected, still maintaining the usual linear dependence between the Curie point magnitude and flux chemical composition. However, the room temperature dc resistivity is distributed uniformly within a large single crystal, both radially and axially, reaching high values between 1011 and 1012 Ω cm. The temperature dependence of the ac conductivity has been studied as well and discussed in terms of the site-occupancy of Rb+-ions and ionic migration paths in nearly stoichiometric RTP crystals.

Original languageEnglish
Pages (from-to)1929-1933
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number7-9
DOIs
StatePublished - Apr 2008

Keywords

  • A2. Growth from high temperature solutions
  • B1. Oxides
  • B2. Ferroelectric materials
  • B3. Nonlinear optical

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