Growth of medium electrical resistivity CdSe single crystals by the temperature gradient solution zoning technique

Large single crystals of CdSe have been grown by the TGSZ technique. This growth method yields medium resistivity ({reversed tilde} 10⁶ ohm cm) n-type crystals suitable for fabrication of improved quality nuclear radiation spectrometers. Measurements of I - V curves have been carried out and analyzed in the framework of the SCLC theory. A discrete electron trapping level at 0.51 eV below the conduction band, with a trap density of 10¹² cm^-;3 has been found and attributed to the presence of Cu impurity. The influence of the traps on the electron transport properties is discussed with respect to the performance of CdSe room temperature nuclear radiation detectors.