High-density nanometer-scale InSb dots formation using droplets heteroepitaxial growth by MOVPE

S. Shusterman; Y. Paltiel; A. Sher; V. Ezersky; Y. Rosenwaks

doi:10.1016/j.jcrysgro.2006.03.042

High-density nanometer-scale InSb dots formation using droplets heteroepitaxial growth by MOVPE

S. Shusterman^*, Y. Paltiel, A. Sher, V. Ezersky, Y. Rosenwaks

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

InSb nanostructures were grown by metalorganic vapor-phase epitaxy, using the droplet heteroepitaxial mode. We studied the factors governing the nanodots properties, comparing the effects of growth conditions, substrate lattice mismatch and substrate chemical composition. The best results, in terms of size and nanodots density, were obtained on As-based substrates, either GaAs or InAs. InSb dots as small as 12 nm with a density of 1×10¹¹ cm^-2 were obtained at growth temperature range of 350-430 °C. In addition, we present low-temperature photoluminescence results of the InSb quantum dot exhibiting peak at 0.27-0.3 eV, dependent on the dots size. Growth conditions, composition of the dots and mechanisms as well as the differences from the well-known Stranski-Krastanov growth mode are discussed.

Original language	English
Pages (from-to)	363-369
Number of pages	7
Journal	Journal of Crystal Growth
Volume	291
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.03.042
State	Published - 1 Jun 2006
Externally published	Yes

Keywords

A1. Surface structure
A3. Droplet epitaxy
A3. Metalorganic vapor-phase epitaxy
B1. Antimonides
B1. InSb
B1. Nanomaterials

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10.1016/j.jcrysgro.2006.03.042

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title = "High-density nanometer-scale InSb dots formation using droplets heteroepitaxial growth by MOVPE",

abstract = "InSb nanostructures were grown by metalorganic vapor-phase epitaxy, using the droplet heteroepitaxial mode. We studied the factors governing the nanodots properties, comparing the effects of growth conditions, substrate lattice mismatch and substrate chemical composition. The best results, in terms of size and nanodots density, were obtained on As-based substrates, either GaAs or InAs. InSb dots as small as 12 nm with a density of 1×1011 cm-2 were obtained at growth temperature range of 350-430 °C. In addition, we present low-temperature photoluminescence results of the InSb quantum dot exhibiting peak at 0.27-0.3 eV, dependent on the dots size. Growth conditions, composition of the dots and mechanisms as well as the differences from the well-known Stranski-Krastanov growth mode are discussed.",

keywords = "A1. Surface structure, A3. Droplet epitaxy, A3. Metalorganic vapor-phase epitaxy, B1. Antimonides, B1. InSb, B1. Nanomaterials",

author = "S. Shusterman and Y. Paltiel and A. Sher and V. Ezersky and Y. Rosenwaks",

year = "2006",

month = jun,

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doi = "10.1016/j.jcrysgro.2006.03.042",

language = "אנגלית",

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T1 - High-density nanometer-scale InSb dots formation using droplets heteroepitaxial growth by MOVPE

AU - Shusterman, S.

AU - Paltiel, Y.

AU - Sher, A.

AU - Ezersky, V.

AU - Rosenwaks, Y.

PY - 2006/6/1

Y1 - 2006/6/1

N2 - InSb nanostructures were grown by metalorganic vapor-phase epitaxy, using the droplet heteroepitaxial mode. We studied the factors governing the nanodots properties, comparing the effects of growth conditions, substrate lattice mismatch and substrate chemical composition. The best results, in terms of size and nanodots density, were obtained on As-based substrates, either GaAs or InAs. InSb dots as small as 12 nm with a density of 1×1011 cm-2 were obtained at growth temperature range of 350-430 °C. In addition, we present low-temperature photoluminescence results of the InSb quantum dot exhibiting peak at 0.27-0.3 eV, dependent on the dots size. Growth conditions, composition of the dots and mechanisms as well as the differences from the well-known Stranski-Krastanov growth mode are discussed.

AB - InSb nanostructures were grown by metalorganic vapor-phase epitaxy, using the droplet heteroepitaxial mode. We studied the factors governing the nanodots properties, comparing the effects of growth conditions, substrate lattice mismatch and substrate chemical composition. The best results, in terms of size and nanodots density, were obtained on As-based substrates, either GaAs or InAs. InSb dots as small as 12 nm with a density of 1×1011 cm-2 were obtained at growth temperature range of 350-430 °C. In addition, we present low-temperature photoluminescence results of the InSb quantum dot exhibiting peak at 0.27-0.3 eV, dependent on the dots size. Growth conditions, composition of the dots and mechanisms as well as the differences from the well-known Stranski-Krastanov growth mode are discussed.

KW - A1. Surface structure

KW - A3. Droplet epitaxy

KW - A3. Metalorganic vapor-phase epitaxy

KW - B1. Antimonides

KW - B1. InSb

KW - B1. Nanomaterials

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

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ER -

High-density nanometer-scale InSb dots formation using droplets heteroepitaxial growth by MOVPE

Abstract

Keywords

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