We report on high-field magnetoconductance measurements made on indium-oxide films as a function of temperature and static disorder. Special emphasis is given to the strong-localization regime where the magnetoconductance reveals a negative contribution associated with a spin-alignment mechanism in addition to the positive contribution associated with orbital, quantum-coherence effects. While the overall features of the theoretically expected effects are observed in our experiments, they depart in certain ways from the detailed predictions. We discuss the merits and shortcomings of current models to describe them, in particular, as they apply to the regime where the localized wave functions become larger than the Bohr radius. The main results of this paper are both quantum interference and spin effects contribute to the magnetoconductance throughout the entire range studied. In the limit of very strong disorder, the quantum interference effects are faithfully described by the Nguyen et al. model. The spin effects, on the other hand, show only qualitative agreement with current models which are unable to account for the saturation field being insensitive to changes in disorder.
|Original language||American English|
|Number of pages||7|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 1996|