High-frequency hopping conductivity and permittivity in compensated semiconductors

V. D. Kagan

doi:10.1134/1.559117

High-frequency hopping conductivity and permittivity in compensated semiconductors

V. D. Kagan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In semiconductors, high-frequency conductivity is caused by polarization reversal of the collective states of a pair of impurity atoms under the action of the random electric fields of all the impurities. A Coulomb correlation which appreciably increases the conductivity is established as a result of the statistical distribution of the particles over four levels of the diatomic system. The relaxation absorption and the permittivity of the entire pair system are calculated allowing for these statistics.

Original language	English
Pages (from-to)	400-403
Number of pages	4
Journal	Journal of Experimental and Theoretical Physics
Volume	90
Issue number	2
DOIs	https://doi.org/10.1134/1.559117
State	Published - Feb 2000
Externally published	Yes

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@article{5e66ec37c4e74dcaa37e3134fe5d0828,

title = "High-frequency hopping conductivity and permittivity in compensated semiconductors",

abstract = "In semiconductors, high-frequency conductivity is caused by polarization reversal of the collective states of a pair of impurity atoms under the action of the random electric fields of all the impurities. A Coulomb correlation which appreciably increases the conductivity is established as a result of the statistical distribution of the particles over four levels of the diatomic system. The relaxation absorption and the permittivity of the entire pair system are calculated allowing for these statistics.",

author = "Kagan, \{V. D.\}",

year = "2000",

month = feb,

doi = "10.1134/1.559117",

language = "אנגלית",

volume = "90",

pages = "400--403",

journal = "Journal of Experimental and Theoretical Physics",

issn = "1063-7761",

publisher = "Pleiades Publishing",

number = "2",

}

TY - JOUR

T1 - High-frequency hopping conductivity and permittivity in compensated semiconductors

AU - Kagan, V. D.

PY - 2000/2

Y1 - 2000/2

N2 - In semiconductors, high-frequency conductivity is caused by polarization reversal of the collective states of a pair of impurity atoms under the action of the random electric fields of all the impurities. A Coulomb correlation which appreciably increases the conductivity is established as a result of the statistical distribution of the particles over four levels of the diatomic system. The relaxation absorption and the permittivity of the entire pair system are calculated allowing for these statistics.

AB - In semiconductors, high-frequency conductivity is caused by polarization reversal of the collective states of a pair of impurity atoms under the action of the random electric fields of all the impurities. A Coulomb correlation which appreciably increases the conductivity is established as a result of the statistical distribution of the particles over four levels of the diatomic system. The relaxation absorption and the permittivity of the entire pair system are calculated allowing for these statistics.

UR - https://www.scopus.com/pages/publications/23044518301

U2 - 10.1134/1.559117

DO - 10.1134/1.559117

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:23044518301

SN - 1063-7761

VL - 90

SP - 400

EP - 403

JO - Journal of Experimental and Theoretical Physics

JF - Journal of Experimental and Theoretical Physics

IS - 2

ER -

High-frequency hopping conductivity and permittivity in compensated semiconductors

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