TY - JOUR
T1 - High Resolution Etching of Semiconductors by the Feedback Mode of the Scanning Electrochemical Microscope
AU - Mandler, Daniel
AU - Bard, Allen J.
PY - 1990/8
Y1 - 1990/8
N2 - High resolution (~µm) etching of semiconductors has been achieved by applying the scanning electrochemical microscope (SECM) in the feedback mode. Strong oxidants, such as bromine, were electrogenerated in situ at an ultramicro-electrode (UME) and used as etchants. The current flowing at the UME was also used to monitor the distance between the UME and the surface. The variables that affect the size and shape of the etched pattern, the required properties of the redox couple, and the mechanism of the etching process are discussed. This approach was successfully applied to several III-V and II-VI semiconductors: gallium arsenide, gallium phosphide, cadmium telluride, and mercury cadmium telluride.
AB - High resolution (~µm) etching of semiconductors has been achieved by applying the scanning electrochemical microscope (SECM) in the feedback mode. Strong oxidants, such as bromine, were electrogenerated in situ at an ultramicro-electrode (UME) and used as etchants. The current flowing at the UME was also used to monitor the distance between the UME and the surface. The variables that affect the size and shape of the etched pattern, the required properties of the redox couple, and the mechanism of the etching process are discussed. This approach was successfully applied to several III-V and II-VI semiconductors: gallium arsenide, gallium phosphide, cadmium telluride, and mercury cadmium telluride.
UR - http://www.scopus.com/inward/record.url?scp=0025470215&partnerID=8YFLogxK
U2 - 10.1149/1.2086965
DO - 10.1149/1.2086965
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AN - SCOPUS:0025470215
SN - 0013-4651
VL - 137
SP - 2468
EP - 2472
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 8
ER -