Abstract
The ability to integrate electronics with Nanocrystals (NCs) allows utilizing their unique properties for a future optoelectronic device. Combing top down approach using self-assembled hybrid organic-NCs systems, with bottom up components can revolutionize devices in future. Here we present an ultra-high light sensing device based on InAs NCs acting as an optical gate to high electron mobility transistor (HEMT) device. Using a very narrow channel the device quantum efficiency is high as 106V/W, while the single to noise ratio (SNR) enables high sensitivity photon detection. These results are compatible with our theoretical estimations.
Original language | English |
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Title of host publication | OMN 2015 Jerusalem - 2015 International Conference on Optical MEMS and Nanophotonics, Proceedings |
Publisher | IEEE Computer Society |
ISBN (Electronic) | 9781467368346 |
DOIs | |
State | Published - 2 Oct 2015 |
Event | International Conference on Optical MEMS and Nanophotonics, OMN 2015 - Jerusalem, Israel Duration: 2 Aug 2015 → 5 Aug 2015 |
Publication series
Name | International Conference on Optical MEMS and Nanophotonics |
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Volume | 02-05-August-2015 |
ISSN (Print) | 2160-5033 |
ISSN (Electronic) | 2160-5041 |
Conference
Conference | International Conference on Optical MEMS and Nanophotonics, OMN 2015 |
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Country/Territory | Israel |
City | Jerusalem |
Period | 2/08/15 → 5/08/15 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
Keywords
- Photoresponsivity
- Quantum dots
- Single photon detectors
- Surface states