TY - JOUR
T1 - Holding Time Degradation in Dynamic MOS RAM by Injection-Induced Electron Currents
AU - Eitan, Boaz
AU - Frohman-Bentchkowsky, Dov
AU - Shappir, Joseph
PY - 1981/12
Y1 - 1981/12
N2 - The holding time degradation of a dynamic MOS RAM caused by a peripheral MOS device operated in the saturation region is discussed. It is shown that the process taking place is injection of electrons into a positively biased substrate region from a grounded junction. This junction becomes forward biased due to the resistive potential drop on the substrate caused by the high substrate current of the short-channel MOS device operated in the saturation region. The model presented in the literature of secondary-impact ionization of holes in the depletion-region edge being responsible for the degradation phenomenon is shown to be inconsistent with experimental results and theoretically improbable.
AB - The holding time degradation of a dynamic MOS RAM caused by a peripheral MOS device operated in the saturation region is discussed. It is shown that the process taking place is injection of electrons into a positively biased substrate region from a grounded junction. This junction becomes forward biased due to the resistive potential drop on the substrate caused by the high substrate current of the short-channel MOS device operated in the saturation region. The model presented in the literature of secondary-impact ionization of holes in the depletion-region edge being responsible for the degradation phenomenon is shown to be inconsistent with experimental results and theoretically improbable.
UR - http://www.scopus.com/inward/record.url?scp=0019702792&partnerID=8YFLogxK
U2 - 10.1109/T-ED.1981.20639
DO - 10.1109/T-ED.1981.20639
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AN - SCOPUS:0019702792
SN - 0018-9383
VL - 28
SP - 1515
EP - 1519
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 12
ER -