Holding Time Degradation in Dynamic MOS RAM by Injection-Induced Electron Currents

Boaz Eitan, Dov Frohman-Bentchkowsky, Joseph Shappir

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

The holding time degradation of a dynamic MOS RAM caused by a peripheral MOS device operated in the saturation region is discussed. It is shown that the process taking place is injection of electrons into a positively biased substrate region from a grounded junction. This junction becomes forward biased due to the resistive potential drop on the substrate caused by the high substrate current of the short-channel MOS device operated in the saturation region. The model presented in the literature of secondary-impact ionization of holes in the depletion-region edge being responsible for the degradation phenomenon is shown to be inconsistent with experimental results and theoretically improbable.

Original languageEnglish
Pages (from-to)1515-1519
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume28
Issue number12
DOIs
StatePublished - Dec 1981

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