Homogeneous linewidth of type-I localized excitons in type-II GaAs/AlAs superlattices

S. Ben Tabou De-Leon, B. Laikhtman

Research output: Contribution to journalConference articlepeer-review

Abstract

We investigate the homogeneous linewidth of localized type-I excitons in type-II GaAs/AlAs superlattices. These localizing centers represent the intermediate case between quasi-two-dimensional and quasi-zero-dimensional confinements. The temperature dependence of the homogeneous linewidth is gained with high precision from micro-photoluminescence spectra. We confirm the reduced exciton-acoustic-phonon interaction with decreasing dimensionality. An enhancement of the average exciton-LO-phonon interaction by localization is found in our sample. But this interaction is very sensitive to the detailed structure of the localizing centers.

Original languageEnglish
Pages (from-to)693-697
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume190
Issue number3
DOIs
StatePublished - Apr 2002
Event7th International Conference on Optics and Excitons in Confined Systems (OECS7) - Montpellier, France
Duration: 3 Sep 20017 Sep 2001

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