HOPPING CONDUCTION: EXPERIMENT VERSUS THEORY.

S. Kirkpatrick

HOPPING CONDUCTION: EXPERIMENT VERSUS THEORY.

S. Kirkpatrick^*

^*Corresponding author for this work

The Rachel and Selim Benin School of Engineering and Computer Science

Research output: Contribution to conference › Paper › peer-review

13 Scopus citations

Abstract

Conductivities for d. c. hopping conduction, calculated by a new method, are found to be in good agreement with recent experimental data on amorphous and moderately doped crystalline Ge. Fair agreement is achieved with experimental data on heavily doped, closely compensated GaAs, but the parameters required are somewhat implausible. It seems more likely that the transport mechanism in this system is quite different from the Miller-Abrahams hopping picture.

Original language	English
Pages	183-187
Number of pages	5
State	Published - 1973
Event	Int Conf on Amorphous and Liq Semicond, 5th, Proc - Garmsich-Partenkirchen, W Ger Duration: 3 Sep 1973 → 8 Sep 1973

Conference

Conference	Int Conf on Amorphous and Liq Semicond, 5th, Proc
City	Garmsich-Partenkirchen, W Ger
Period	3/09/73 → 8/09/73

Cite this

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title = "HOPPING CONDUCTION: EXPERIMENT VERSUS THEORY.",

abstract = "Conductivities for d. c. hopping conduction, calculated by a new method, are found to be in good agreement with recent experimental data on amorphous and moderately doped crystalline Ge. Fair agreement is achieved with experimental data on heavily doped, closely compensated GaAs, but the parameters required are somewhat implausible. It seems more likely that the transport mechanism in this system is quite different from the Miller-Abrahams hopping picture.",

author = "S. Kirkpatrick",

year = "1973",

language = "אנגלית",

pages = "183--187",

note = "Int Conf on Amorphous and Liq Semicond, 5th, Proc ; Conference date: 03-09-1973 Through 08-09-1973",

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T1 - HOPPING CONDUCTION

T2 - Int Conf on Amorphous and Liq Semicond, 5th, Proc

AU - Kirkpatrick, S.

PY - 1973

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N2 - Conductivities for d. c. hopping conduction, calculated by a new method, are found to be in good agreement with recent experimental data on amorphous and moderately doped crystalline Ge. Fair agreement is achieved with experimental data on heavily doped, closely compensated GaAs, but the parameters required are somewhat implausible. It seems more likely that the transport mechanism in this system is quite different from the Miller-Abrahams hopping picture.

AB - Conductivities for d. c. hopping conduction, calculated by a new method, are found to be in good agreement with recent experimental data on amorphous and moderately doped crystalline Ge. Fair agreement is achieved with experimental data on heavily doped, closely compensated GaAs, but the parameters required are somewhat implausible. It seems more likely that the transport mechanism in this system is quite different from the Miller-Abrahams hopping picture.

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AN - SCOPUS:0016407444

SP - 183

EP - 187

Y2 - 3 September 1973 through 8 September 1973

ER -

HOPPING CONDUCTION: EXPERIMENT VERSUS THEORY.

Abstract

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