Hybrid nanocrystals-organic-semiconductor light sensor

T. Aqua; R. Naaman; A. Aharoni; U. Banin; Y. Paltiel

doi:10.1063/1.2940230

Hybrid nanocrystals-organic-semiconductor light sensor

T. Aqua^*, R. Naaman, A. Aharoni, U. Banin, Y. Paltiel

^*Corresponding author for this work

Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We present a light sensing device based on nearly spherical, defect free colloidal nanocrystals (NCs) of InAs acting as a light activated gate for a GaAsAlGaAs field effect semiconductor transistor. We use self-assembled organic monolayer as linkers that attach the InAs NCs to the surface of the semiconductor device, instead of the gate that exists in common transistors. When the NCs absorb light, at a frequency corresponding to their resonance, a change in the current through the transistor takes place while no current flows through the NCs themselves.

Original language	English
Article number	223112
Journal	Applied Physics Letters
Volume	92
Issue number	22
DOIs	https://doi.org/10.1063/1.2940230
State	Published - 2008

Bibliographical note

Funding Information:
The authors thank Gilad Gotesman for performing the SEM images and Eyal Capua for preparing the semiconductor devices. This work was partially supported by the Israeli Ministry of Science and by the Grand Center at the Weizmann Institute.

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abstract = "We present a light sensing device based on nearly spherical, defect free colloidal nanocrystals (NCs) of InAs acting as a light activated gate for a GaAsAlGaAs field effect semiconductor transistor. We use self-assembled organic monolayer as linkers that attach the InAs NCs to the surface of the semiconductor device, instead of the gate that exists in common transistors. When the NCs absorb light, at a frequency corresponding to their resonance, a change in the current through the transistor takes place while no current flows through the NCs themselves.",

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AU - Banin, U.

AU - Paltiel, Y.

N1 - Funding Information: The authors thank Gilad Gotesman for performing the SEM images and Eyal Capua for preparing the semiconductor devices. This work was partially supported by the Israeli Ministry of Science and by the Grand Center at the Weizmann Institute.

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AB - We present a light sensing device based on nearly spherical, defect free colloidal nanocrystals (NCs) of InAs acting as a light activated gate for a GaAsAlGaAs field effect semiconductor transistor. We use self-assembled organic monolayer as linkers that attach the InAs NCs to the surface of the semiconductor device, instead of the gate that exists in common transistors. When the NCs absorb light, at a frequency corresponding to their resonance, a change in the current through the transistor takes place while no current flows through the NCs themselves.

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Hybrid nanocrystals-organic-semiconductor light sensor

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