Original language | English |
---|---|
Pages (from-to) | 1572 |
Number of pages | 1 |
Journal | IEEE Transactions on Electron Devices |
Volume | 30 |
Issue number | 11 |
DOIs | |
State | Published - Nov 1983 |
Externally published | Yes |
IIB-3 Analysis and Modeling of Floating-Gate E2Prom Cells
A. Kolodny, S. Nieh, B. Eitan, J. Shappir
Research output: Contribution to journal › Article › peer-review
1
Scopus
citations