TY - JOUR
T1 - III-V compound semiconductor reactive ion etching in chlorine and methane containing mixtures
AU - Dulkin, A. E.
AU - Moshkalyov, S. A.
AU - Pyataev, V. Z.
AU - Smirnov, A. S.
AU - Frolov, K. S.
PY - 1992/3
Y1 - 1992/3
N2 - GaAs and InP reactive ion etching in gas mixtures Cl2/Ar, SiCl4/Ar, CH4/H2, CH4/H2/Ar/Cl2 was investigated in the wide range of discharge parameters in order to find out the conditions for obtaining their equal etch rates and good surface morphology. It has been demonstrated that III-V compounds nonselective etching with good surface morphology can be achieved in chlorine, hydrogen and methane - containing mixture.
AB - GaAs and InP reactive ion etching in gas mixtures Cl2/Ar, SiCl4/Ar, CH4/H2, CH4/H2/Ar/Cl2 was investigated in the wide range of discharge parameters in order to find out the conditions for obtaining their equal etch rates and good surface morphology. It has been demonstrated that III-V compounds nonselective etching with good surface morphology can be achieved in chlorine, hydrogen and methane - containing mixture.
UR - http://www.scopus.com/inward/record.url?scp=0026836108&partnerID=8YFLogxK
U2 - 10.1016/0167-9317(92)90071-X
DO - 10.1016/0167-9317(92)90071-X
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AN - SCOPUS:0026836108
SN - 0167-9317
VL - 17
SP - 345
EP - 348
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 1-4
ER -