III-V compound semiconductor reactive ion etching in chlorine and methane containing mixtures

A. E. Dulkin*, S. A. Moshkalyov, V. Z. Pyataev, A. S. Smirnov, K. S. Frolov

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

GaAs and InP reactive ion etching in gas mixtures Cl2/Ar, SiCl4/Ar, CH4/H2, CH4/H2/Ar/Cl2 was investigated in the wide range of discharge parameters in order to find out the conditions for obtaining their equal etch rates and good surface morphology. It has been demonstrated that III-V compounds nonselective etching with good surface morphology can be achieved in chlorine, hydrogen and methane - containing mixture.

Original languageAmerican English
Pages (from-to)345-348
Number of pages4
JournalMicroelectronic Engineering
Volume17
Issue number1-4
DOIs
StatePublished - Mar 1992
Externally publishedYes

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