III-V compound semiconductor reactive ion etching in chlorine and methane containing mixtures

A. E. Dulkin; S. A. Moshkalyov; V. Z. Pyataev; A. S. Smirnov; K. S. Frolov

doi:10.1016/0167-9317(92)90071-X

III-V compound semiconductor reactive ion etching in chlorine and methane containing mixtures

A. E. Dulkin^*
, S. A. Moshkalyov
, V. Z. Pyataev
, A. S. Smirnov
, K. S. Frolov

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

GaAs and InP reactive ion etching in gas mixtures Cl2/Ar, SiCl4/Ar, CH4/H2, CH4/H2/Ar/Cl2 was investigated in the wide range of discharge parameters in order to find out the conditions for obtaining their equal etch rates and good surface morphology. It has been demonstrated that III-V compounds nonselective etching with good surface morphology can be achieved in chlorine, hydrogen and methane - containing mixture.

Original language	English
Pages (from-to)	345-348
Number of pages	4
Journal	Microelectronic Engineering
Volume	17
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(92)90071-X
State	Published - Mar 1992
Externally published	Yes

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title = "III-V compound semiconductor reactive ion etching in chlorine and methane containing mixtures",

abstract = "GaAs and InP reactive ion etching in gas mixtures Cl2/Ar, SiCl4/Ar, CH4/H2, CH4/H2/Ar/Cl2 was investigated in the wide range of discharge parameters in order to find out the conditions for obtaining their equal etch rates and good surface morphology. It has been demonstrated that III-V compounds nonselective etching with good surface morphology can be achieved in chlorine, hydrogen and methane - containing mixture.",

author = "Dulkin, \{A. E.\} and Moshkalyov, \{S. A.\} and Pyataev, \{V. Z.\} and Smirnov, \{A. S.\} and Frolov, \{K. S.\}",

year = "1992",

month = mar,

doi = "10.1016/0167-9317(92)90071-X",

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T1 - III-V compound semiconductor reactive ion etching in chlorine and methane containing mixtures

AU - Dulkin, A. E.

AU - Moshkalyov, S. A.

AU - Pyataev, V. Z.

AU - Smirnov, A. S.

AU - Frolov, K. S.

PY - 1992/3

Y1 - 1992/3

N2 - GaAs and InP reactive ion etching in gas mixtures Cl2/Ar, SiCl4/Ar, CH4/H2, CH4/H2/Ar/Cl2 was investigated in the wide range of discharge parameters in order to find out the conditions for obtaining their equal etch rates and good surface morphology. It has been demonstrated that III-V compounds nonselective etching with good surface morphology can be achieved in chlorine, hydrogen and methane - containing mixture.

AB - GaAs and InP reactive ion etching in gas mixtures Cl2/Ar, SiCl4/Ar, CH4/H2, CH4/H2/Ar/Cl2 was investigated in the wide range of discharge parameters in order to find out the conditions for obtaining their equal etch rates and good surface morphology. It has been demonstrated that III-V compounds nonselective etching with good surface morphology can be achieved in chlorine, hydrogen and methane - containing mixture.

UR - https://www.scopus.com/pages/publications/0026836108

U2 - 10.1016/0167-9317(92)90071-X

DO - 10.1016/0167-9317(92)90071-X

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AN - SCOPUS:0026836108

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VL - 17

SP - 345

EP - 348

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

III-V compound semiconductor reactive ion etching in chlorine and methane containing mixtures

Abstract

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