Impact ionization of excitons in an electric field in GaN

D. K. Nelson; M. A. Jacobson; V. D. Kagan; M. Shmidt; B. Gil; N. Grandjean; J. Massies

doi:10.1002/(SICI)1521-3951(199911)216:1<63::AID-PSSB63>3.0.CO;2-8

Impact ionization of excitons in an electric field in GaN

D. K. Nelson^*
, M. A. Jacobson
, V. D. Kagan
, M. Shmidt
, B. Gil
, N. Grandjean
, J. Massies

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Quenching of the exciton luminescence of GaN epitaxial films and GaN/AlGaN quantum wells in an electric field is observed and attributed to impact ionization of excitonic states by hot electrons. It is found that impurity scattering rules the momentum relaxation of electrons rather than the acoustic phonon scattering. The effective mean free path of hot electrons l_eff is estimated. The value of l_eff for quantum wells appears to be one order of magnitude larger than that for epitaxial films.

Original language	English
Pages (from-to)	63-67
Number of pages	5
Journal	Physica Status Solidi (B): Basic Research
Volume	216
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199911)216:1<63::AID-PSSB63>3.0.CO;2-8
State	Published - Nov 1999
Externally published	Yes

Access to Document

10.1002/(SICI)1521-3951(199911)216:1<63::AID-PSSB63>3.0.CO;2-8

Cite this

@article{709288193b084f79b1f1eacabc615379,

title = "Impact ionization of excitons in an electric field in GaN",

abstract = "Quenching of the exciton luminescence of GaN epitaxial films and GaN/AlGaN quantum wells in an electric field is observed and attributed to impact ionization of excitonic states by hot electrons. It is found that impurity scattering rules the momentum relaxation of electrons rather than the acoustic phonon scattering. The effective mean free path of hot electrons leff is estimated. The value of leff for quantum wells appears to be one order of magnitude larger than that for epitaxial films.",

author = "Nelson, \{D. K.\} and Jacobson, \{M. A.\} and Kagan, \{V. D.\} and M. Shmidt and B. Gil and N. Grandjean and J. Massies",

year = "1999",

month = nov,

doi = "10.1002/(SICI)1521-3951(199911)216:1<63::AID-PSSB63>3.0.CO;2-8",

language = "אנגלית",

volume = "216",

pages = "63--67",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc.",

number = "1",

}

TY - JOUR

T1 - Impact ionization of excitons in an electric field in GaN

AU - Nelson, D. K.

AU - Jacobson, M. A.

AU - Kagan, V. D.

AU - Shmidt, M.

AU - Gil, B.

AU - Grandjean, N.

AU - Massies, J.

PY - 1999/11

Y1 - 1999/11

N2 - Quenching of the exciton luminescence of GaN epitaxial films and GaN/AlGaN quantum wells in an electric field is observed and attributed to impact ionization of excitonic states by hot electrons. It is found that impurity scattering rules the momentum relaxation of electrons rather than the acoustic phonon scattering. The effective mean free path of hot electrons leff is estimated. The value of leff for quantum wells appears to be one order of magnitude larger than that for epitaxial films.

AB - Quenching of the exciton luminescence of GaN epitaxial films and GaN/AlGaN quantum wells in an electric field is observed and attributed to impact ionization of excitonic states by hot electrons. It is found that impurity scattering rules the momentum relaxation of electrons rather than the acoustic phonon scattering. The effective mean free path of hot electrons leff is estimated. The value of leff for quantum wells appears to be one order of magnitude larger than that for epitaxial films.

UR - https://www.scopus.com/pages/publications/0033229227

U2 - 10.1002/(SICI)1521-3951(199911)216:1<63::AID-PSSB63>3.0.CO;2-8

DO - 10.1002/(SICI)1521-3951(199911)216:1<63::AID-PSSB63>3.0.CO;2-8

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0033229227

SN - 0370-1972

VL - 216

SP - 63

EP - 67

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 1

ER -

Impact ionization of excitons in an electric field in GaN

Abstract

Access to Document

Other files and links

Fingerprint

Cite this