Improved representation of calculated surface mobilities in semiconductors. II. majority Carriers

Y. Goldstein; N. B. Grover; A. Many; R. F. Greene

doi:10.1063/1.1728348

Improved representation of calculated surface mobilities in semiconductors. II. majority Carriers

Y. Goldstein^*, N. B. Grover, A. Many, R. F. Greene

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Improved representation is given of calculated values of majority carrier surface mobility. For extrinsic material the semiconductor effectively constitutes a single-carrier system. The surface mobility is then independent of the bulk potential and can be expressed as a function of the potential barrier V_s by a single family of curves over the entire range of interest of surface potential, material resistivity, and temperature.

Original language	English
Pages (from-to)	2540-2541
Number of pages	2
Journal	Journal of Applied Physics
Volume	32
Issue number	12
DOIs	https://doi.org/10.1063/1.1728348
State	Published - 1961

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title = "Improved representation of calculated surface mobilities in semiconductors. II. majority Carriers",

abstract = "Improved representation is given of calculated values of majority carrier surface mobility. For extrinsic material the semiconductor effectively constitutes a single-carrier system. The surface mobility is then independent of the bulk potential and can be expressed as a function of the potential barrier Vs by a single family of curves over the entire range of interest of surface potential, material resistivity, and temperature.",

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year = "1961",

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AB - Improved representation is given of calculated values of majority carrier surface mobility. For extrinsic material the semiconductor effectively constitutes a single-carrier system. The surface mobility is then independent of the bulk potential and can be expressed as a function of the potential barrier Vs by a single family of curves over the entire range of interest of surface potential, material resistivity, and temperature.

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Improved representation of calculated surface mobilities in semiconductors. II. majority Carriers

Abstract

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